BSS138
ActiveN-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR, 50V, 220MA
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BSS138
ActiveN-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR, 50V, 220MA
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Technical Specifications
Parameters and characteristics for this part
| Specification | BSS138 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 220 mA |
| Drain to Source Voltage (Vdss) | 50 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 2.4 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 27 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | SOT-23-3, TO-236-3, SC-59 |
| Power Dissipation (Max) [Max] | 350 mW |
| Rds On (Max) @ Id, Vgs | 3 Ohm |
| Supplier Device Package | SOT-23-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 1.6 V |
BSS138_F085 Series
N-Channel Logic Level Enhancement Mode Field Effect Transistor 60V, 220mA, 3.5Ω
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs [Max] | Supplier Device Package | Technology | Package / Case | Vgs (Max) | FET Type | Mounting Type | Power Dissipation (Max) | Power Dissipation (Max) [Max] | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Gate Charge (Qg) (Max) @ Vgs | Operating Temperature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 ON Semiconductor | -55 °C | 150 °C | 3.5 Ohm | 220 mA | 27 pF | 50 V | 1.5 V | 4.5 V 10 V | 2.4 nC | SOT-23-3 (TO-236) | MOSFET (Metal Oxide) | SC-59 SOT-23-3 TO-236-3 | 20 V | N-Channel | Surface Mount | 360 mW | |||||
ON Semiconductor | -55 °C | 150 °C | 200 mA | 50 pF | 50 V | 1.5 V | 2.75 V 5 V | SOT-23-3 (TO-236) | MOSFET (Metal Oxide) | SC-59 SOT-23-3 TO-236-3 | 20 V | N-Channel | Surface Mount | 225 mW | |||||||
ON Semiconductor | -55 °C | 150 °C | 200 mA | 50 pF | 50 V | 1.5 V | 5 V | SOT-23-3 (TO-236) | MOSFET (Metal Oxide) | SC-59 SOT-23-3 TO-236-3 | 20 V | N-Channel | Surface Mount | 225 mW | |||||||
 ON Semiconductor | -55 °C | 150 °C | 3.5 Ohm | 220 mA | 27 pF | 50 V | 1.5 V | 4.5 V 10 V | 2.4 nC | EFCP1313-4CC-037 | MOSFET (Metal Oxide) | 4-XFBGA | 20 V | N-Channel | Surface Mount | 360 mW | |||||
ON Semiconductor | -55 °C | 150 °C | 220 mA | 50 V | 1.2 V | 1.8 V | 2.4 nC | SOT-23-3 | MOSFET (Metal Oxide) | SC-59 SOT-23-3 TO-236-3 | 12 V | N-Channel | Surface Mount | 350 mW | 2.5 V | 58 pF | |||||
 ON Semiconductor | -55 °C | 150 °C | 200 mA | 50 pF | 50 V | 1.5 V | 5 V | SOT-23-3 (TO-236) | MOSFET (Metal Oxide) | SC-59 SOT-23-3 TO-236-3 | 20 V | N-Channel | Surface Mount | 225 mW | |||||||
ON Semiconductor | 200 mA | 50 pF | 50 V | 1.5 V | SOT-23-3 (TO-236) | MOSFET (Metal Oxide) | SC-59 SOT-23-3 TO-236-3 | N-Channel | Surface Mount | ||||||||||||
 ON Semiconductor | -55 °C | 150 °C | 3.5 Ohm | 210 mA | 38 pF | 50 V | 1.5 V | 4.5 V 10 V | SOT-323 | MOSFET (Metal Oxide) | SC-70 SOT-323 | 20 V | N-Channel | Surface Mount | 340 mW | 1.1 nC | |||||
 ON Semiconductor | -55 °C | 150 °C | 3.5 Ohm | 220 mA | 27 pF | 50 V | 1.5 V | 4.5 V 10 V | 2.4 nC | SOT-23-3 | MOSFET (Metal Oxide) | SC-59 SOT-23-3 TO-236-3 | 20 V | N-Channel | Surface Mount | 360 mW | |||||
ON Semiconductor | 3 Ohm | 220 mA | 27 pF | 50 V | 1.6 V | 4.5 V 10 V | 2.4 nC | SOT-23-3 | MOSFET (Metal Oxide) | SC-59 SOT-23-3 TO-236-3 | 20 V | N-Channel | Surface Mount | 350 mW | 150 °C |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 0.15 | |
| 1 | $ 0.27 | |||
| 1 | $ 0.10 | |||
| 1 | $ 0.16 | |||
| 1 | $ 0.16 | |||
| 10 | $ 0.07 | |||
| 10 | $ 0.17 | |||
| 10 | $ 0.11 | |||
| 10 | $ 0.10 | |||
| 10 | $ 0.11 | |||
| 25 | $ 0.08 | |||
| 100 | $ 0.06 | |||
| 100 | $ 0.06 | |||
| 100 | $ 0.04 | |||
| 100 | $ 0.06 | |||
| 100 | $ 0.10 | |||
| 250 | $ 0.05 | |||
| 500 | $ 0.05 | |||
| 500 | $ 0.08 | |||
| 500 | $ 0.04 | |||
| 500 | $ 0.05 | |||
| 500 | $ 0.03 | |||
| 1000 | $ 0.02 | |||
| 1000 | $ 0.03 | |||
| 1000 | $ 0.07 | |||
| 1000 | $ 0.04 | |||
| 1000 | $ 0.03 | |||
| Digi-Reel® | 1 | $ 0.16 | ||
| 1 | $ 0.10 | |||
| 1 | $ 0.27 | |||
| 1 | $ 0.15 | |||
| 1 | $ 0.16 | |||
| 10 | $ 0.07 | |||
| 10 | $ 0.10 | |||
| 10 | $ 0.11 | |||
| 10 | $ 0.17 | |||
| 10 | $ 0.11 | |||
| 25 | $ 0.08 | |||
| 100 | $ 0.06 | |||
| 100 | $ 0.06 | |||
| 100 | $ 0.06 | |||
| 100 | $ 0.10 | |||
| 100 | $ 0.04 | |||
| 250 | $ 0.05 | |||
| 500 | $ 0.03 | |||
| 500 | $ 0.05 | |||
| 500 | $ 0.04 | |||
| 500 | $ 0.05 | |||
| 500 | $ 0.08 | |||
| 1000 | $ 0.02 | |||
| 1000 | $ 0.03 | |||
| 1000 | $ 0.04 | |||
| 1000 | $ 0.07 | |||
| 1000 | $ 0.03 | |||
| Tape & Reel (TR) | 3000 | $ 0.03 | ||
| 3000 | $ 0.03 | |||
| 3000 | $ 0.06 | |||
| 3000 | $ 0.02 | |||
| 3000 | $ 0.03 | |||
| 6000 | $ 0.06 | |||
| 6000 | $ 0.03 | |||
| 6000 | $ 0.03 | |||
| 6000 | $ 0.02 | |||
| 6000 | $ 0.05 | |||
| 6000 | $ 0.02 | |||
| 9000 | $ 0.01 | |||
| 9000 | $ 0.02 | |||
| 9000 | $ 0.02 | |||
| 9000 | $ 0.05 | |||
| 15000 | $ 0.04 | |||
| 15000 | $ 0.02 | |||
| 21000 | $ 0.04 | |||
| 30000 | $ 0.04 | |||
| 30000 | $ 0.02 | |||
| 30000 | $ 0.01 | |||
| 30000 | $ 0.02 | |||
| 30000 | $ 0.02 | |||
| 75000 | $ 0.02 | |||
| 75000 | $ 0.04 | |||
| 75000 | $ 0.02 | |||
| 75000 | $ 0.02 | |||
| 75000 | $ 0.01 | |||
| 150000 | $ 0.03 | |||
| 150000 | $ 0.01 | |||
| 150000 | $ 0.01 | |||
| 150000 | $ 0.02 | |||
| 150000 | $ 0.01 | |||
| Newark | Each (Supplied on Cut Tape) | 1 | $ 0.27 | |
| 50 | $ 0.16 | |||
| 100 | $ 0.08 | |||
| 250 | $ 0.08 | |||
| 500 | $ 0.07 | |||
| 1000 | $ 0.06 | |||
| 2500 | $ 0.06 | |||
| 5000 | $ 0.05 | |||
| ON Semiconductor | N/A | 1 | $ 0.04 | |
Description
General part information
BSS138_F085 Series
These N-Channel enhancement mode field effect tran sistors are produced using ON Semiconductor’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while pro vide rugged, reliable, and fast switching perfor mance.These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and otherswitching applications.
Documents
Technical documentation and resources