Specification	BSS138-T

Current - Continuous Drain (Id) @ 25°C	220 mA
Drain to Source Voltage (Vdss)	50 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	2.4 nC
Input Capacitance (Ciss) (Max) @ Vds	27 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	4-XFBGA
Power Dissipation (Max)	360 mW
Rds On (Max) @ Id, Vgs	3.5 Ohm
Supplier Device Package	EFCP1313-4CC-037
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	1.5 V

BSS138_F085 Series

N-Channel Logic Level Enhancement Mode Field Effect Transistor 60V, 220mA, 3.5Ω

Part	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Technology	Package / Case	Vgs (Max)	FET Type	Mounting Type	Power Dissipation (Max)	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature
ON Semiconductor 9G85-BSS138	-55 °C	150 °C	3.5 Ohm	220 mA	27 pF	50 V	1.5 V	4.5 V 10 V	2.4 nC	SOT-23-3 (TO-236)	MOSFET (Metal Oxide)	SC-59 SOT-23-3 TO-236-3	20 V	N-Channel	Surface Mount	360 mW
ON Semiconductor BSS138LT7G	-55 °C	150 °C		200 mA	50 pF	50 V	1.5 V	2.75 V 5 V		SOT-23-3 (TO-236)	MOSFET (Metal Oxide)	SC-59 SOT-23-3 TO-236-3	20 V	N-Channel	Surface Mount	225 mW
ON Semiconductor BSS138LT3G	-55 °C	150 °C		200 mA	50 pF	50 V	1.5 V	5 V		SOT-23-3 (TO-236)	MOSFET (Metal Oxide)	SC-59 SOT-23-3 TO-236-3	20 V	N-Channel	Surface Mount	225 mW
ON Semiconductor BSS138-T	-55 °C	150 °C	3.5 Ohm	220 mA	27 pF	50 V	1.5 V	4.5 V 10 V	2.4 nC	EFCP1313-4CC-037	MOSFET (Metal Oxide)	4-XFBGA	20 V	N-Channel	Surface Mount	360 mW
ON Semiconductor BSS138K	-55 °C	150 °C		220 mA		50 V	1.2 V	1.8 V	2.4 nC	SOT-23-3	MOSFET (Metal Oxide)	SC-59 SOT-23-3 TO-236-3	12 V	N-Channel	Surface Mount		350 mW	2.5 V	58 pF
ON Semiconductor BSS138LT1G	-55 °C	150 °C		200 mA	50 pF	50 V	1.5 V	5 V		SOT-23-3 (TO-236)	MOSFET (Metal Oxide)	SC-59 SOT-23-3 TO-236-3	20 V	N-Channel	Surface Mount	225 mW
ON Semiconductor BSS138LT1				200 mA	50 pF	50 V	1.5 V			SOT-23-3 (TO-236)	MOSFET (Metal Oxide)	SC-59 SOT-23-3 TO-236-3		N-Channel	Surface Mount
ON Semiconductor BSS138W	-55 °C	150 °C	3.5 Ohm	210 mA	38 pF	50 V	1.5 V	4.5 V 10 V		SOT-323	MOSFET (Metal Oxide)	SC-70 SOT-323	20 V	N-Channel	Surface Mount	340 mW				1.1 nC
ON Semiconductor BSS138-F085	-55 °C	150 °C	3.5 Ohm	220 mA	27 pF	50 V	1.5 V	4.5 V 10 V	2.4 nC	SOT-23-3	MOSFET (Metal Oxide)	SC-59 SOT-23-3 TO-236-3	20 V	N-Channel	Surface Mount	360 mW
ON Semiconductor BSS138			3 Ohm	220 mA	27 pF	50 V	1.6 V	4.5 V 10 V	2.4 nC	SOT-23-3	MOSFET (Metal Oxide)	SC-59 SOT-23-3 TO-236-3	20 V	N-Channel	Surface Mount		350 mW				150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

BSS138_F085 Series

These N-Channel enhancement mode field effect tran sistors are produced using ON Semiconductor’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while pro vide rugged, reliable, and fast switching perfor mance.These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and otherswitching applications.

Documents

Technical documentation and resources

Package Drawing-318-SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P

Package Drawing