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SOT-23-3
Discrete Semiconductor Products

BSS138K

Active
ON Semiconductor

N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 50V 0.22A, 1.6Ω

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SOT-23-3
Discrete Semiconductor Products

BSS138K

Active
ON Semiconductor

N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 50V 0.22A, 1.6Ω

Technical Specifications

Parameters and characteristics for this part

SpecificationBSS138K
Current - Continuous Drain (Id) @ 25°C220 mA
Drain to Source Voltage (Vdss)50 V
Drive Voltage (Max Rds On, Min Rds On)2.5 V
Drive Voltage (Max Rds On, Min Rds On)1.8 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]2.4 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]58 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]350 mW
Supplier Device PackageSOT-23-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)12 V
Vgs(th) (Max) @ Id1.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.30
10$ 0.19
100$ 0.12
500$ 0.09
1000$ 0.08
Digi-Reel® 1$ 0.30
10$ 0.19
100$ 0.12
500$ 0.09
1000$ 0.08
Tape & Reel (TR) 3000$ 0.06
6000$ 0.06
9000$ 0.05
15000$ 0.05
21000$ 0.05
30000$ 0.05
75000$ 0.04
150000$ 0.04
ON SemiconductorN/A 1$ 0.04

Description

General part information

BSS138_F085 Series

These N-Channel enhancement mode field effect tran sistors are produced using ON Semiconductor’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while pro vide rugged, reliable, and fast switching perfor mance.These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and otherswitching applications.