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SOT-23-3,TO-236-3,Micro3,SSD3,SST3
Discrete Semiconductor Products

BSS138LT1G

Active
ON Semiconductor

MOSFET TRANSISTOR, N CHANNEL, 200 MA, 50 V, 3.5 OHM, 5 V, 1.5 V ROHS COMPLIANT: YES

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SOT-23-3,TO-236-3,Micro3,SSD3,SST3
Discrete Semiconductor Products

BSS138LT1G

Active
ON Semiconductor

MOSFET TRANSISTOR, N CHANNEL, 200 MA, 50 V, 3.5 OHM, 5 V, 1.5 V ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

SpecificationBSS138LT1G
Current - Continuous Drain (Id) @ 25°C200 mA
Drain to Source Voltage (Vdss)50 V
Drive Voltage (Max Rds On, Min Rds On)5 V
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds50 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)225 mW
Supplier Device PackageSOT-23-3 (TO-236)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id1.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.29
10$ 0.18
100$ 0.11
500$ 0.08
1000$ 0.07
Digi-Reel® 1$ 0.29
10$ 0.18
100$ 0.11
500$ 0.08
1000$ 0.07
Tape & Reel (TR) 3000$ 0.06
6000$ 0.05
9000$ 0.05
15000$ 0.05
21000$ 0.05
30000$ 0.04
75000$ 0.04
150000$ 0.04
NewarkEach (Supplied on Full Reel) 3000$ 0.07
6000$ 0.07
12000$ 0.07
18000$ 0.06
30000$ 0.06
ON SemiconductorN/A 1$ 0.04

Description

General part information

BSS138_F085 Series

These N-Channel enhancement mode field effect tran sistors are produced using ON Semiconductor’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while pro vide rugged, reliable, and fast switching perfor mance.These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and otherswitching applications.