Zenode.ai Logo
Beta
SOT 23-3
Discrete Semiconductor Products

9G85-BSS138

Obsolete
ON Semiconductor

MOSFET N-CH SOT23

Deep-Dive with AI

Search across all available documentation for this part.

SOT 23-3
Discrete Semiconductor Products

9G85-BSS138

Obsolete
ON Semiconductor

MOSFET N-CH SOT23

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

Specification9G85-BSS138
Current - Continuous Drain (Id) @ 25°C220 mA
Drain to Source Voltage (Vdss)50 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]2.4 nC
Input Capacitance (Ciss) (Max) @ Vds27 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)360 mW
Rds On (Max) @ Id, Vgs3.5 Ohm
Supplier Device PackageSOT-23-3 (TO-236)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id1.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

BSS138_F085 Series

These N-Channel enhancement mode field effect tran sistors are produced using ON Semiconductor’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while pro vide rugged, reliable, and fast switching perfor mance.These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and otherswitching applications.

Documents

Technical documentation and resources

No documents available