Discrete Semiconductor Products

RF501B2STL

Obsolete

DIODE GEN PURP 200V 5A CPD

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

DIODE GEN PURP 200V 5A CPD

Technical Specifications

Parameters and characteristics for this part

Specification	RF501B2STL

Current - Average Rectified (Io)	5 A
Current - Reverse Leakage @ Vr	1 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Reverse Recovery Time (trr)	30 ns
Speed	500 ns, 200 mA
Supplier Device Package	CPD
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If [Max]	920 mV

Super Fast Recovery Diode

Part	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction	Supplier Device Package	Package / Case	Mounting Type	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If [Max]	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]
Rohm Semiconductor RF501BGE2STL	Standard	200 V	150 ¯C	TO-252GE	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	5 A	920 mV	200 mA 500 ns	25 ns	1 µA
Rohm Semiconductor RF501PS2STB	Standard	200 V		8-TSOP		Surface Mount	5 A	920 mV	200 mA 500 ns	30 ns	1 µA	150 °C
Rohm Semiconductor RF501BM2STL	Standard	200 V		TO-252	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	5 A	920 mV	200 mA 500 ns	25 ns	1 µA	150 °C
Rohm Semiconductor RF501B2STL	Standard	200 V		CPD	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	5 A	920 mV	200 mA 500 ns	30 ns	1 µA	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

RF501BM2S is the silicon epitaxial planar type Fast Recovery Diode.

Technical documentation and resources