Catalog
Super Fast Recovery Diode
Key Features
• Low switching loss, Low forward voltage
Description
AI
RF501BGE2S is the silicon epitaxial planar type Fast Recovery Diode.
Beta
⌘K
Super Fast Recovery Diode
Super Fast Recovery Diode
| Part | Operating Temperature - Junction | Speed | Package / Case | Technology | Current - Reverse Leakage @ Vr | Supplier Device Package | Reverse Recovery Time (trr) | Voltage - DC Reverse (Vr) (Max) [Max] | Current - Average Rectified (Io) | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | 150 ¯C | 200 mA 500 ns | DPAK (2 Leads + Tab) SC-63 TO-252-3 | Standard | 1 µA | TO-252GE | 25 ns | 200 V | 5 A | Surface Mount |
Rohm Semiconductor | 150 °C | 200 mA 500 ns | Standard | 1 µA | 8-TSOP | 30 ns | 200 V | 5 A | Surface Mount | |
 Rohm Semiconductor | 150 °C | 200 mA 500 ns | DPAK (2 Leads + Tab) SC-63 TO-252-3 | Standard | 1 µA | TO-252 | 25 ns | 200 V | 5 A | Surface Mount |