RF501PS2STB

Obsolete

DIODE GEN PURP 200V 5A 8TSOP

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Discrete Semiconductor Products

Obsolete

DIODE GEN PURP 200V 5A 8TSOP

Technical Specifications

Parameters and characteristics for this part

Specification	RF501PS2STB

Current - Average Rectified (Io)	5 A
Current - Reverse Leakage @ Vr	1 µA
Mounting Type	Surface Mount
Operating Temperature - Junction	150 °C
Reverse Recovery Time (trr)	30 ns
Speed	200 mA, 500 ns
Supplier Device Package	8-TSOP
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V

Super Fast Recovery Diode

Part	Operating Temperature - Junction	Speed	Package / Case	Technology	Current - Reverse Leakage @ Vr	Supplier Device Package	Reverse Recovery Time (trr)	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)	Mounting Type
Rohm Semiconductor RF501BGE2STL	150 ¯C	200 mA 500 ns	DPAK (2 Leads + Tab) SC-63 TO-252-3	Standard	1 µA	TO-252GE	25 ns	200 V	5 A	Surface Mount
Rohm Semiconductor RF501PS2STB	150 °C	200 mA 500 ns		Standard	1 µA	8-TSOP	30 ns	200 V	5 A	Surface Mount
Rohm Semiconductor RF501BM2STL	150 °C	200 mA 500 ns	DPAK (2 Leads + Tab) SC-63 TO-252-3	Standard	1 µA	TO-252	25 ns	200 V	5 A	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

RF501BGE2S is the silicon epitaxial planar type Fast Recovery Diode.

Technical documentation and resources