Specification	MSCSM170HM12CAG

Configuration	4 N-Channel
Current - Continuous Drain (Id) @ 25°C	179 A
Drain to Source Voltage (Vdss)	1.7 kV
Drain to Source Voltage (Vdss)	1700 V
Gate Charge (Qg) (Max) @ Vgs	534 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	9900 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 C
Package / Case	Module
Power - Max [Max]	843 W
Technology	Silicon Carbide (SiC)
Vgs(th) (Max) @ Id	3.2 V

MSCSM170AM058CT6LIAG-Module Series

1700V, 17.5 mOhm, SP3F, Dual Common Source mSiC™ MOSFET Module

Part	Operating Temperature [Min]	Operating Temperature [Max]	Configuration	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Technology	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Power - Max [Max]	Mounting Type	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Rds On (Max) @ Id, Vgs [Max]	Power - Max	Vgs(th) (Max) @ Id [Max]	Configuration
Microchip Technology MSCSM170AM45CT1AG	-40 C	175 °C	2 N Channel	Module	3300 pF	Silicon Carbide (SiC)	178 nC	1.7 kV	1700 V	64 A	45 mOhm	319 W	Chassis Mount	3.2 V
Microchip Technology MSCSM170TLM11CAG	-40 C	175 °C	4 N-Channel (Three Level Inverter)	Module		Silicon Carbide (SiC)		1.7 kV	1700 V	238 A	11.3 mOhm		Chassis Mount	3.2 V	712 nC	13200 pF	SP6C
Microchip Technology MSCSM170AM039CT6AG	-40 C	175 °C	2 N Channel	Module	29700 pF	Silicon Carbide (SiC)		1.7 kV	1700 V	523 A	20 V 270 A	2.4 kW	Chassis Mount	3.3 V	1602 nC			5 mOhm
Microchip Technology MSCSM170AM11CT3AG	-40 C	175 °C	2 N Channel	Module		Silicon Carbide (SiC)		1.7 kV	1700 V	240 A	11.3 mOhm		Chassis Mount	3.2 V	712 nC	13200 pF			1.14 kW
Microchip Technology MSCSM170AM058CD3AG	-40 C	175 °C	2 N Channel	Module	19800 pF	Silicon Carbide (SiC)		1.7 kV	1700 V	353 A	7.5 mOhm	1.642 kW	Chassis Mount							3.3 V
Microchip Technology MSCSM170AM23CT1AG	-40 C	175 °C	2 N Channel	Module	6600 pF	Silicon Carbide (SiC)		1.7 kV	1700 V	124 A	22.5 mOhm	602 W	Chassis Mount	3.2 V	356 nC
Microchip Technology MSCSM170HM12CAG	-40 C	175 °C		Module		Silicon Carbide (SiC)	534 nC	1.7 kV	1700 V	179 A		843 W	Chassis Mount	3.2 V		9900 pF					4 N-Channel
Microchip Technology MSCSM170AM058CT6LIAG	-40 C	175 °C	2 N Channel	Module	19800 pF	Silicon Carbide (SiC)		1.7 kV	1700 V	353 A	7.5 mOhm	1.642 kW	Chassis Mount							3.3 V
Microchip Technology MSCSM170TLM15CAG	-40 C	175 °C	4 N-Channel (Three Level Inverter)	Module		Silicon Carbide (SiC)	534 nC	1.7 kV	1700 V	179 A		843 W	Chassis Mount	3.2 V		9900 pF	SP6C
Microchip Technology MSCSM170TLM45C3AG	-40 C	175 °C	4 N-Channel (Three Level Inverter)	Module	3300 pF	Silicon Carbide (SiC)	178 nC	1.7 kV	1700 V	64 A	45 mOhm	319 W	Chassis Mount	3.2 V			SP3F

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	1	$ 996.25
Microchip Direct	N/A	1	$ 996.25
		50	$ 825.47
		100	$ 740.07
		250	$ 711.61
		500	$ 626.22
		1000	$ 569.29
		5000	$ 500.97
Newark	Each	1	$ 996.26
		5	$ 683.15
		50	$ 660.38
		100	$ 637.60
		250	$ 637.60
		500	$ 637.60

Description

General part information

MSCSM170AM058CT6LIAG-Module Series

* SiC Power MOSFET

* Low RDS(on)

* High temperature performance

Documents

Technical documentation and resources

MSCSM170HM12CAG 1700V Full Bridge SiC MOSFET Module Datasheet

Data Sheets

Driving mSiC™ MOSFETs

Application Notes