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MSCSM170AM45CT1AG
Discrete Semiconductor Products

MSCSM170AM45CT1AG

Active
Microchip Technology

POWER FIELD-EFFECT TRANSISTOR, 64A I(D), 1700V, 0.045OHM, 2-ELEMENT, N-CHANNEL, SILICON CARBIDE, METAL-OXIDE SEMICONDUCTOR FET

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MSCSM170AM45CT1AG
Discrete Semiconductor Products

MSCSM170AM45CT1AG

Active
Microchip Technology

POWER FIELD-EFFECT TRANSISTOR, 64A I(D), 1700V, 0.045OHM, 2-ELEMENT, N-CHANNEL, SILICON CARBIDE, METAL-OXIDE SEMICONDUCTOR FET

Technical Specifications

Parameters and characteristics for this part

SpecificationMSCSM170AM45CT1AG
Configuration2 N Channel
Current - Continuous Drain (Id) @ 25°C64 A
Drain to Source Voltage (Vdss)1.7 kV
Drain to Source Voltage (Vdss)1700 V
Gate Charge (Qg) (Max) @ Vgs178 nC
Input Capacitance (Ciss) (Max) @ Vds3300 pF
Mounting TypeChassis Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-40 C
Package / CaseModule
Power - Max [Max]319 W
Rds On (Max) @ Id, Vgs45 mOhm
TechnologySilicon Carbide (SiC)
Vgs(th) (Max) @ Id3.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 1$ 147.44
Microchip DirectN/A 1$ 147.44
50$ 122.87
100$ 108.12
250$ 105.18
500$ 102.22
1000$ 98.29
5000$ 92.39
NewarkEach 5$ 117.95
50$ 114.02
100$ 110.08
250$ 110.08
500$ 110.08

Description

General part information

MSCSM170AM058CT6LIAG-Module Series

* SiC Power MOSFET

* Low RDS(on)

* High temperature performance