
Discrete Semiconductor Products
MSCSM170AM23CT1AG
ActiveMicrochip Technology
POWER FIELD-EFFECT TRANSISTOR, 124A I(D), 1700V, 0.0225OHM, 2-ELEMENT, N-CHANNEL, SILICON CARBIDE, METAL-OXIDE SEMICONDUCTOR FET
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Discrete Semiconductor Products
MSCSM170AM23CT1AG
ActiveMicrochip Technology
POWER FIELD-EFFECT TRANSISTOR, 124A I(D), 1700V, 0.0225OHM, 2-ELEMENT, N-CHANNEL, SILICON CARBIDE, METAL-OXIDE SEMICONDUCTOR FET
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Technical Specifications
Parameters and characteristics for this part
| Specification | MSCSM170AM23CT1AG |
|---|---|
| Configuration | 2 N Channel |
| Current - Continuous Drain (Id) @ 25°C | 124 A |
| Drain to Source Voltage (Vdss) | 1.7 kV |
| Drain to Source Voltage (Vdss) | 1700 V |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 356 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 6600 pF |
| Mounting Type | Chassis Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -40 C |
| Package / Case | Module |
| Power - Max [Max] | 602 W |
| Rds On (Max) @ Id, Vgs | 22.5 mOhm |
| Technology | Silicon Carbide (SiC) |
| Vgs(th) (Max) @ Id | 3.2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 1 | $ 261.91 | |
| Microchip Direct | N/A | 1 | $ 261.91 | |
| 50 | $ 218.25 | |||
| 100 | $ 192.07 | |||
| 250 | $ 186.83 | |||
| 500 | $ 181.59 | |||
| 1000 | $ 174.61 | |||
| 5000 | $ 164.13 | |||
| Newark | Each | 1 | $ 261.92 | |
| 5 | $ 209.53 | |||
| 50 | $ 202.55 | |||
| 100 | $ 195.56 | |||
| 250 | $ 195.56 | |||
| 500 | $ 195.56 | |||
Description
General part information
MSCSM170AM058CT6LIAG-Module Series
* SiC Power MOSFET
* Low RDS(on)
* High temperature performance
Documents
Technical documentation and resources