Zenode.ai Logo
Beta
MSCSM170AM23CT1AG
Discrete Semiconductor Products

MSCSM170AM23CT1AG

Active
Microchip Technology

POWER FIELD-EFFECT TRANSISTOR, 124A I(D), 1700V, 0.0225OHM, 2-ELEMENT, N-CHANNEL, SILICON CARBIDE, METAL-OXIDE SEMICONDUCTOR FET

Deep-Dive with AI

Search across all available documentation for this part.

MSCSM170AM23CT1AG
Discrete Semiconductor Products

MSCSM170AM23CT1AG

Active
Microchip Technology

POWER FIELD-EFFECT TRANSISTOR, 124A I(D), 1700V, 0.0225OHM, 2-ELEMENT, N-CHANNEL, SILICON CARBIDE, METAL-OXIDE SEMICONDUCTOR FET

Technical Specifications

Parameters and characteristics for this part

SpecificationMSCSM170AM23CT1AG
Configuration2 N Channel
Current - Continuous Drain (Id) @ 25°C124 A
Drain to Source Voltage (Vdss)1.7 kV
Drain to Source Voltage (Vdss)1700 V
Gate Charge (Qg) (Max) @ Vgs [Max]356 nC
Input Capacitance (Ciss) (Max) @ Vds6600 pF
Mounting TypeChassis Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-40 C
Package / CaseModule
Power - Max [Max]602 W
Rds On (Max) @ Id, Vgs22.5 mOhm
TechnologySilicon Carbide (SiC)
Vgs(th) (Max) @ Id3.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 1$ 261.91
Microchip DirectN/A 1$ 261.91
50$ 218.25
100$ 192.07
250$ 186.83
500$ 181.59
1000$ 174.61
5000$ 164.13
NewarkEach 1$ 261.92
5$ 209.53
50$ 202.55
100$ 195.56
250$ 195.56
500$ 195.56

Description

General part information

MSCSM170AM058CT6LIAG-Module Series

* SiC Power MOSFET

* Low RDS(on)

* High temperature performance