MSCSM170AM058CT6LIAG-Module Series

1700V, 17.5 mOhm, SP3F, Dual Common Source mSiC™ MOSFET Module

Catalog

1700V, 17.5 mOhm, SP3F, Dual Common Source mSiC™ MOSFET Module

Part	Operating Temperature [Min]	Operating Temperature [Max]	Configuration	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Technology	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Power - Max [Max]	Mounting Type	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Rds On (Max) @ Id, Vgs [Max]	Power - Max	Vgs(th) (Max) @ Id [Max]	Configuration
Microchip Technology MSCSM170AM45CT1AG	-40 C	175 °C	2 N Channel	Module	3300 pF	Silicon Carbide (SiC)	178 nC	1.7 kV	1700 V	64 A	45 mOhm	319 W	Chassis Mount	3.2 V
Microchip Technology MSCSM170TLM11CAG	-40 C	175 °C	4 N-Channel (Three Level Inverter)	Module		Silicon Carbide (SiC)		1.7 kV	1700 V	238 A	11.3 mOhm		Chassis Mount	3.2 V	712 nC	13200 pF	SP6C
Microchip Technology MSCSM170AM039CT6AG	-40 C	175 °C	2 N Channel	Module	29700 pF	Silicon Carbide (SiC)		1.7 kV	1700 V	523 A	20 V 270 A	2.4 kW	Chassis Mount	3.3 V	1602 nC			5 mOhm
Microchip Technology MSCSM170AM11CT3AG	-40 C	175 °C	2 N Channel	Module		Silicon Carbide (SiC)		1.7 kV	1700 V	240 A	11.3 mOhm		Chassis Mount	3.2 V	712 nC	13200 pF			1.14 kW
Microchip Technology MSCSM170AM058CD3AG	-40 C	175 °C	2 N Channel	Module	19800 pF	Silicon Carbide (SiC)		1.7 kV	1700 V	353 A	7.5 mOhm	1.642 kW	Chassis Mount							3.3 V
Microchip Technology MSCSM170AM23CT1AG	-40 C	175 °C	2 N Channel	Module	6600 pF	Silicon Carbide (SiC)		1.7 kV	1700 V	124 A	22.5 mOhm	602 W	Chassis Mount	3.2 V	356 nC
Microchip Technology MSCSM170HM12CAG	-40 C	175 °C		Module		Silicon Carbide (SiC)	534 nC	1.7 kV	1700 V	179 A		843 W	Chassis Mount	3.2 V		9900 pF					4 N-Channel
Microchip Technology MSCSM170AM058CT6LIAG	-40 C	175 °C	2 N Channel	Module	19800 pF	Silicon Carbide (SiC)		1.7 kV	1700 V	353 A	7.5 mOhm	1.642 kW	Chassis Mount							3.3 V
Microchip Technology MSCSM170TLM15CAG	-40 C	175 °C	4 N-Channel (Three Level Inverter)	Module		Silicon Carbide (SiC)	534 nC	1.7 kV	1700 V	179 A		843 W	Chassis Mount	3.2 V		9900 pF	SP6C
Microchip Technology MSCSM170TLM45C3AG	-40 C	175 °C	4 N-Channel (Three Level Inverter)	Module	3300 pF	Silicon Carbide (SiC)	178 nC	1.7 kV	1700 V	64 A	45 mOhm	319 W	Chassis Mount	3.2 V			SP3F

Catalog

1700V, 17.5 mOhm, SP3F, Dual Common Source mSiC™ MOSFET Module

Key Features

- • Configuration: Dual Common Source

- • VDSS (V): 1700

- • RDSon (mR) typ: 11.6

- • Current (A) Tc=80C: 144

- • Silicon Type: SiC MOSFET

- • Package Type: SP3F

Description

* SiC Power MOSFET * Low RDS(on) * High temperature performance * Kelvin source for easy drive * Low stray inductance * Internal thermistor for temperature monitoring (optional) * High efficiency converter * Outstanding performance at high frequency operation * Stable temperature behavior * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * RoHS Compliant