Specification	RS1E350BNTB

Current - Continuous Drain (Id) @ 25°C	80 A, 35 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	185 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	7900 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	35 W, 3 W
Rds On (Max) @ Id, Vgs	1.7 mOhm
Supplier Device Package	8-HSOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

RS1E Series

Nch 30V 60A Middle Power MOSFET

Part	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Mounting Type	Supplier Device Package	Vgs(th) (Max) @ Id	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Technology	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]
Rohm Semiconductor RS1E130GNTB	30 V	13 A	3 W 22.2 W	11.7 mOhm	Surface Mount	8-HSOP	2.5 V	20 V	4.5 V 10 V	MOSFET (Metal Oxide)	8-PowerTDFN	420 pF	N-Channel	7.9 nC	150 °C
Rohm Semiconductor RS1E240GNTB	30 V	24 A 72 A	3 W 27 W	3.3 mOhm	Surface Mount	8-HSOP	2.5 V	20 V	4.5 V 10 V	MOSFET (Metal Oxide)	8-PowerTDFN		N-Channel	23 nC	150 °C	1500 pF
Rohm Semiconductor RS1E281BNTB1	30 V	28 A 80 A	3 W	2.3 mOhm	Surface Mount	8-HSOP	2.5 V	20 V	4.5 V 10 V	MOSFET (Metal Oxide)	8-PowerTDFN		N-Channel	94 nC	150 °C	5100 pF
Rohm Semiconductor RS1E180BNTB	30 V	60 A	3 W 25 W	4.9 mOhm	Surface Mount	CPT3	2.5 V	20 V	4.5 V 10 V	MOSFET (Metal Oxide)	DPAK (2 Leads + Tab) SC-63 TO-252-3		N-Channel		150 °C	2400 pF	46 nC
Rohm Semiconductor RS1E350BNTB	30 V	35 A 80 A	3 W 35 W	1.7 mOhm	Surface Mount	8-HSOP	2.5 V	20 V	4.5 V 10 V	MOSFET (Metal Oxide)	8-PowerTDFN	7900 pF	N-Channel		150 °C		185 nC
Rohm Semiconductor RS1E200BNTB	30 V	20 A 68 A	3 W 25 W	3.9 mOhm	Surface Mount	8-HSOP	2.5 V	20 V	4.5 V 10 V	MOSFET (Metal Oxide)	8-PowerTDFN		N-Channel	59 nC	150 °C	3100 pF
Rohm Semiconductor RS1E321GNTB1	30 V	32 A 80 A	3 W		Surface Mount	8-HSOP	2.5 V	20 V	4.5 V 10 V	MOSFET (Metal Oxide)	8-PowerTDFN	2850 pF	N-Channel	42.8 nC	150 °C
Rohm Semiconductor RS1E350BNTB1	30 V	35 A 80 A	3 W 35 W	1.7 mOhm	Surface Mount	8-HSOP	2.5 V	20 V	4.5 V 10 V	MOSFET (Metal Oxide)	8-PowerTDFN	7900 pF	N-Channel		150 °C		185 nC
Rohm Semiconductor RS1E240BNTB	30 V	24 A 40 A	3 W 30 W	3.2 mOhm	Surface Mount	8-HSOP	2.5 V	20 V	4.5 V 10 V	MOSFET (Metal Oxide)	8-PowerTDFN		N-Channel	70 nC	150 °C	3900 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.72
		10	$ 1.33
		100	$ 1.01
		500	$ 0.87
		1000	$ 0.86
	Digi-Reel®	1	$ 1.72
		10	$ 1.33
		100	$ 1.01
		500	$ 0.87
		1000	$ 0.86
	N/A	750	$ 1.75
	Tape & Reel (TR)	2500	$ 0.73
		5000	$ 0.70
Newark	Each (Supplied on Cut Tape)	1	$ 1.73
		10	$ 1.36
		25	$ 1.25
		50	$ 1.12
		100	$ 1.01
		300	$ 1.01
		500	$ 0.83
		1000	$ 0.78

Description

General part information

RS1E Series

Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

RS1E350BNTB

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RS1E350BNTB

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Technical Specifications

RS1E Series

Pricing

Description

RS1E Series

Documents

HSOP8 Part Marking

HSOP8DAuAlRLL Inner Structure

Transistor, MOSFET Flammability

HSMT8 TB Taping Spec

Datasheet

RS1E Series