Specification	RS1E200BNTB

Current - Continuous Drain (Id) @ 25°C	68 A, 20 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	59 nC
Input Capacitance (Ciss) (Max) @ Vds	3100 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	25 W, 3 W
Rds On (Max) @ Id, Vgs	3.9 mOhm
Supplier Device Package	8-HSOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

RS1E Series

Nch 30V 60A Middle Power MOSFET

Part	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Mounting Type	Supplier Device Package	Vgs(th) (Max) @ Id	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Technology	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]
Rohm Semiconductor RS1E130GNTB	30 V	13 A	3 W 22.2 W	11.7 mOhm	Surface Mount	8-HSOP	2.5 V	20 V	4.5 V 10 V	MOSFET (Metal Oxide)	8-PowerTDFN	420 pF	N-Channel	7.9 nC	150 °C
Rohm Semiconductor RS1E240GNTB	30 V	24 A 72 A	3 W 27 W	3.3 mOhm	Surface Mount	8-HSOP	2.5 V	20 V	4.5 V 10 V	MOSFET (Metal Oxide)	8-PowerTDFN		N-Channel	23 nC	150 °C	1500 pF
Rohm Semiconductor RS1E281BNTB1	30 V	28 A 80 A	3 W	2.3 mOhm	Surface Mount	8-HSOP	2.5 V	20 V	4.5 V 10 V	MOSFET (Metal Oxide)	8-PowerTDFN		N-Channel	94 nC	150 °C	5100 pF
Rohm Semiconductor RS1E180BNTB	30 V	60 A	3 W 25 W	4.9 mOhm	Surface Mount	CPT3	2.5 V	20 V	4.5 V 10 V	MOSFET (Metal Oxide)	DPAK (2 Leads + Tab) SC-63 TO-252-3		N-Channel		150 °C	2400 pF	46 nC
Rohm Semiconductor RS1E350BNTB	30 V	35 A 80 A	3 W 35 W	1.7 mOhm	Surface Mount	8-HSOP	2.5 V	20 V	4.5 V 10 V	MOSFET (Metal Oxide)	8-PowerTDFN	7900 pF	N-Channel		150 °C		185 nC
Rohm Semiconductor RS1E200BNTB	30 V	20 A 68 A	3 W 25 W	3.9 mOhm	Surface Mount	8-HSOP	2.5 V	20 V	4.5 V 10 V	MOSFET (Metal Oxide)	8-PowerTDFN		N-Channel	59 nC	150 °C	3100 pF
Rohm Semiconductor RS1E321GNTB1	30 V	32 A 80 A	3 W		Surface Mount	8-HSOP	2.5 V	20 V	4.5 V 10 V	MOSFET (Metal Oxide)	8-PowerTDFN	2850 pF	N-Channel	42.8 nC	150 °C
Rohm Semiconductor RS1E350BNTB1	30 V	35 A 80 A	3 W 35 W	1.7 mOhm	Surface Mount	8-HSOP	2.5 V	20 V	4.5 V 10 V	MOSFET (Metal Oxide)	8-PowerTDFN	7900 pF	N-Channel		150 °C		185 nC
Rohm Semiconductor RS1E240BNTB	30 V	24 A 40 A	3 W 30 W	3.2 mOhm	Surface Mount	8-HSOP	2.5 V	20 V	4.5 V 10 V	MOSFET (Metal Oxide)	8-PowerTDFN		N-Channel	70 nC	150 °C	3900 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.80
		10	$ 0.70
		100	$ 0.48
		500	$ 0.40
		1000	$ 0.34
	Digi-Reel®	1	$ 0.80
		10	$ 0.70
		100	$ 0.48
		500	$ 0.40
		1000	$ 0.34
	N/A	0	$ 0.66
	Tape & Reel (TR)	2500	$ 0.32
		5000	$ 0.29
		7500	$ 0.28
		12500	$ 0.27
		17500	$ 0.27
Newark	Each	1	$ 0.55
		10	$ 0.50
		100	$ 0.45
		500	$ 0.42
		1000	$ 0.40
		2500	$ 0.38
		10000	$ 0.37

Description

General part information

RS1E Series

Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

Documents

Technical documentation and resources

RS1E200BN Data Sheet

Data Sheet

Compliance of the RoHS directive

Environmental Data

Method for Calculating Junction Temperature from Transient Thermal Resistance Data

Thermal Design

RS1E200BNTB

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RS1E200BNTB

Deep-Dive with AI

Technical Specifications

RS1E Series

Pricing

Description

RS1E Series

Documents

RS1E200BN Data Sheet

Compliance of the RoHS directive

Method for Calculating Junction Temperature from Transient Thermal Resistance Data

Basics of Thermal Resistance and Heat Dissipation

MOSFET Gate Drive Current Setting for Motor Driving

Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)

PCB Layout Thermal Design Guide

Importance of Probe Calibration When Measuring Power: Deskew

Notes for Temperature Measurement Using Thermocouples

Method for Monitoring Switching Waveform

Impedance Characteristics of Bypass Capacitor

HSOP8 Cu AlR Inner Structure

How to Use LTspice&reg; Models

Two-Resistor Model for Thermal Simulation

Condition of Soldering / Land Pattern Reference

About Export Regulations

Taping Information

MOSFET Gate Resistor Setting for Motor Driving

Anti-Whisker formation - Transistors

List of Transistor Package Thermal Resistance

Report of SVHC under REACH Regulation

Part Explanation

Calculation of Power Dissipation in Switching Circuit

Temperature derating method for Safe Operating Area (SOA)

Precautions When Measuring the Rear of the Package with a Thermocouple

What Is Thermal Design

Types and Features of Transistors

What is a Thermal Model? (Transistor)

How to Create Symbols for PSpice Models

Notes for Calculating Power Consumption:Static Operation

Moisture Sensitivity Level - Transistors

Package Dimensions

About Flammability of Materials

Measurement Method and Usage of Thermal Resistance RthJC

How to Use LTspice&reg; Models: Tips for Improving Convergence

Notes for Temperature Measurement Using Forward Voltage of PN Junction

Explanation for Marking

ESD Data

HSOP8SAuAlR Inner Structure

RS1E Series

How to Use LTspice® Models

How to Use LTspice® Models: Tips for Improving Convergence