Zenode.ai Logo
Beta
8 PowerVDFN
Discrete Semiconductor Products

STL7N60M2

Active
STMicroelectronics

N-CHANNEL 600 V, 0.92 OHM TYP., 5 A MDMESH M2 POWER MOSFET IN A POWERFLAT 5X5 HV PACKAGE

Deep-Dive with AI

Search across all available documentation for this part.

8 PowerVDFN
Discrete Semiconductor Products

STL7N60M2

Active
STMicroelectronics

N-CHANNEL 600 V, 0.92 OHM TYP., 5 A MDMESH M2 POWER MOSFET IN A POWERFLAT 5X5 HV PACKAGE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTL7N60M2
Current - Continuous Drain (Id) @ 25°C5 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs8.8 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]271 pF
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / Case8-PowerVDFN
Power Dissipation (Max)67 W, 4 W
Rds On (Max) @ Id, Vgs1.05 Ohm
Supplier Device PackagePowerFLAT™ (5x5)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 2.13
10$ 1.36
100$ 0.92
500$ 0.73
1000$ 0.67
Digi-Reel® 1$ 2.13
10$ 1.36
100$ 0.92
500$ 0.73
1000$ 0.67
N/A 2272$ 1.39
Tape & Reel (TR) 3000$ 0.60
6000$ 0.57

Description

General part information

STL7 Series

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.