Discrete Semiconductor Products
STL7N6LF3
ActiveSTMicroelectronics
AUTOMOTIVE-GRADE N-CHANNEL 60 V, 35 MOHM TYP., 6.5 A STRIPFET F3 POWER MOSFET IN A POWERFLAT 5X6 PACKAGE
Discrete Semiconductor Products
STL7N6LF3
ActiveSTMicroelectronics
AUTOMOTIVE-GRADE N-CHANNEL 60 V, 35 MOHM TYP., 6.5 A STRIPFET F3 POWER MOSFET IN A POWERFLAT 5X6 PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STL7N6LF3 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 20 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 8.7 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 432 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerVDFN |
| Power Dissipation (Max) | 4.3 W, 52 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 43 mOhm |
| Supplier Device Package | PowerFlat™ (5x6) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 1.44 | |
| 10 | $ 1.18 | |||
| 100 | $ 0.91 | |||
| 500 | $ 0.78 | |||
| 1000 | $ 0.63 | |||
| Digi-Reel® | 1 | $ 1.44 | ||
| 10 | $ 1.18 | |||
| 100 | $ 0.91 | |||
| 500 | $ 0.78 | |||
| 1000 | $ 0.63 | |||
| N/A | 4813 | $ 1.02 | ||
| Tape & Reel (TR) | 3000 | $ 0.59 | ||
| 6000 | $ 0.57 | |||
| 9000 | $ 0.54 | |||
| Newark | Each (Supplied on Cut Tape) | 1 | $ 1.54 | |
| 10 | $ 1.21 | |||
| 25 | $ 1.14 | |||
| 50 | $ 1.07 | |||
| 100 | $ 1.00 | |||
| 250 | $ 0.96 | |||
| 500 | $ 0.91 | |||
| 1000 | $ 0.84 | |||
Description
General part information
STL7 Series
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Documents
Technical documentation and resources
