Discrete Semiconductor Products

STL7NM60N

Obsolete

STMicroelectronics

MOSFET N-CH 600V 5.8A 14PWRFLAT

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Discrete Semiconductor Products

STL7NM60N

Obsolete

STMicroelectronics

MOSFET N-CH 600V 5.8A 14PWRFLAT

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STL7NM60N

Current - Continuous Drain (Id) @ 25°C	5.8 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	14 nC
Input Capacitance (Ciss) (Max) @ Vds	363 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	14-PowerVQFN
Power Dissipation (Max)	68 W
Rds On (Max) @ Id, Vgs [Max]	900 mOhm
Supplier Device Package	14-PowerFLAT™ (5x5)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

STL7 Series

N-channel 600 V, 0.92 Ohm typ., 5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x5 HV package

Part	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Max]	Operating Temperature [Min]	Power Dissipation (Max)	Supplier Device Package	Vgs (Max)	Drain to Source Voltage (Vdss)	Package / Case	Qualification	Current - Continuous Drain (Id) @ 25°C	Grade	Mounting Type	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Technology	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]
STMicroelectronics STL7N6LF3	8.7 nC	432 pF	175 °C	-55 °C	4.3 W 52 W	PowerFlat™ (5x6)	20 V	60 V	8-PowerVDFN	AEC-Q101	20 A	Automotive	Surface Mount	N-Channel	5 V 10 V	2.5 V	43 mOhm	MOSFET (Metal Oxide)
STMicroelectronics STL7N60M2	8.8 nC				4 W 67 W	PowerFLAT™ (5x5)	25 V	600 V	8-PowerVDFN		5 A		Surface Mount	N-Channel	10 V	4 V	1.05 Ohm	MOSFET (Metal Oxide)	150 °C	271 pF
STMicroelectronics STL7NM60N	14 nC	363 pF	150 °C	-55 °C	68 W	14-PowerFLAT™ (5x5)	25 V	600 V	14-PowerVQFN		5.8 A		Surface Mount	N-Channel	10 V	4 V		MOSFET (Metal Oxide)			900 mOhm
STMicroelectronics STL7N6F7			150 °C	-55 °C		PowerFlat™ (2x2)	20 V	60 V	6-PowerWDFN		7 A		Surface Mount	N-Channel	10 V	4 V	25 mOhm	MOSFET (Metal Oxide)		450 pF		8 nC	2.4 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 1.11

Description

General part information

STL7 Series

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Documents

Technical documentation and resources