Discrete Semiconductor Products
APT50M38JLL
ActiveMicrochip Technology
MOSFET MOS7 500 V 38 MOHM SOT-227 4 SOT-227 TUBE ROHS COMPLIANT: YES
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Discrete Semiconductor Products
APT50M38JLL
ActiveMicrochip Technology
MOSFET MOS7 500 V 38 MOHM SOT-227 4 SOT-227 TUBE ROHS COMPLIANT: YES
Technical Specifications
Parameters and characteristics for this part
| Specification | APT50M38JLL |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 88 A |
| Drain to Source Voltage (Vdss) | 500 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 270 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 12000 pF |
| Mounting Type | Chassis Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-227-4, miniBLOC |
| Power Dissipation (Max) [Max] | 694 W |
| Supplier Device Package | ISOTOP® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id [Max] | 5 V |
APT5010JVRU2-Module Series
500V/Boost chopper/Si Mosfet modules
| Part | Rds On (Max) @ Id, Vgs | Mounting Type | Vgs(th) (Max) @ Id | Package / Case | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) [Max] | Gate Charge (Qg) (Max) @ Vgs | Supplier Device Package | Technology | FET Type | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Rds On (Max) @ Id, Vgs [Max] | Vgs(th) (Max) @ Id [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Microchip Technology | 100 mOhm | Through Hole | 5 V | TO-264-3 TO-264AA | 500 V | 10 V | 520 W | 95 nC | TO-264 [L] | MOSFET (Metal Oxide) | N-Channel | 30 V | 46 A | -55 °C | 150 °C | 4360 pF | |||||
Microchip Technology | 100 mOhm | Chassis Mount | 4 V | SOT-227-4 miniBLOC | 500 V | 10 V | 312 nC | SOT-227 | MOSFET (Metal Oxide) | N-Channel | 30 V | 44 A | -55 °C | 150 °C | 450 W | 7410 pF | |||||
 Microchip Technology | 100 mOhm | Through Hole | 4 V | TO-247-3 Variant | 500 V | T-MAX™ [B2] | MOSFET (Metal Oxide) | N-Channel | 47 A | 8900 pF | 470 nC | ||||||||||
 Microchip Technology | Through Hole | TO-247-3 | 500 V | TO-247 [B] | MOSFET (Metal Oxide) | N-Channel | 32 A | 5280 pF | 300 nC | 150 mOhm | |||||||||||
 Microchip Technology | Chassis Mount | 4 V | SOT-227-4 miniBLOC | 500 V | ISOTOP® | MOSFET (Metal Oxide) | N-Channel | 77 A | 19600 pF | 1000 nC | 50 mOhm | ||||||||||
Microchip Technology | Through Hole | TO-247-3 | 500 V | TO-247 [B] | MOSFET (Metal Oxide) | N-Channel | 30 A | 5280 pF | 300 nC | ||||||||||||
Microchip Technology | Chassis Mount | 4 V | SOT-227-4 miniBLOC | 500 V | ISOTOP® | MOSFET (Metal Oxide) | N-Channel | 77 A | 19600 pF | 1000 nC | 50 mOhm | ||||||||||
 Microchip Technology | 180 mOhm | Surface Mount | D3PAK (2 Leads + Tab) TO-268-3 TO-268AA | 500 V | D3PAK | MOSFET (Metal Oxide) | N-Channel | 27 A | 2596 pF | 58 nC | |||||||||||
Microchip Technology | Chassis Mount | SOT-227-4 miniBLOC | 500 V | 10 V | 694 W | 270 nC | ISOTOP® | MOSFET (Metal Oxide) | N-Channel | 30 V | 88 A | -55 °C | 150 °C | 12000 pF | 5 V | ||||||
Microchip Technology | Through Hole | TO-247-3 | 500 V | 43 nC | TO-247 [B] | MOSFET (Metal Oxide) | N-Channel | 22 A | 1900 pF | 240 mOhm |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 76.80 | |
| 100 | $ 62.33 | |||
| Microchip Direct | TUBE | 1 | $ 76.80 | |
| 100 | $ 66.31 | |||
| 250 | $ 63.82 | |||
| 500 | $ 62.33 | |||
| 1000 | $ 60.82 | |||
| 5000 | $ 58.84 | |||
| Newark | Each | 1 | $ 76.80 | |
| 100 | $ 66.31 | |||
| 250 | $ 63.82 | |||
| 500 | $ 62.33 | |||
Description
General part information
APT5010JVRU2-Module Series
Power MOS 8™ is a family of high speed, high voltage (500-1200 V) N-channel
switch-mode power transistors with lower EMI characteristics and lower cost
compared to previous generation devices. These MOSFETs / FREDFETs have been
Documents
Technical documentation and resources