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TO-247-3-PKG-Series
Discrete Semiconductor Products

APT5015BVRG

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Microchip Technology

POWER FIELD-EFFECT TRANSISTOR, 32A I(D), 500V, 0.15OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-247

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TO-247-3-PKG-Series
Discrete Semiconductor Products

APT5015BVRG

Active
Microchip Technology

POWER FIELD-EFFECT TRANSISTOR, 32A I(D), 500V, 0.15OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-247

Technical Specifications

Parameters and characteristics for this part

SpecificationAPT5015BVRG
Current - Continuous Drain (Id) @ 25°C32 A
Drain to Source Voltage (Vdss)500 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]300 nC
Input Capacitance (Ciss) (Max) @ Vds5280 pF
Mounting TypeThrough Hole
Package / CaseTO-247-3
Rds On (Max) @ Id, Vgs [Max]150 mOhm
Supplier Device PackageTO-247 [B]
TechnologyMOSFET (Metal Oxide)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 50$ 12.90
Microchip DirectTUBE 1$ 12.90
100$ 11.14
250$ 10.73
500$ 10.47
1000$ 10.22
5000$ 9.88

Description

General part information

APT5010JVRU2-Module Series

Power MOS 8™ is a family of high speed, high voltage (500-1200 V) N-channel

switch-mode power transistors with lower EMI characteristics and lower cost

compared to previous generation devices. These MOSFETs / FREDFETs have been