Specification	APT5010JVRU2

Current - Continuous Drain (Id) @ 25°C	44 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	312 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	7410 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-227-4, miniBLOC
Power Dissipation (Max)	450 W
Rds On (Max) @ Id, Vgs	100 mOhm
Supplier Device Package	SOT-227
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

APT5010JVRU2-Module Series

500V/Boost chopper/Si Mosfet modules

Part	Rds On (Max) @ Id, Vgs	Mounting Type	Vgs(th) (Max) @ Id	Package / Case	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Technology	FET Type	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs [Max]	Vgs(th) (Max) @ Id [Max]
Microchip Technology APT5010LLLG	100 mOhm	Through Hole	5 V	TO-264-3 TO-264AA	500 V	10 V	520 W	95 nC	TO-264 [L]	MOSFET (Metal Oxide)	N-Channel	30 V	46 A	-55 °C	150 °C	4360 pF
Microchip Technology APT5010JVRU2	100 mOhm	Chassis Mount	4 V	SOT-227-4 miniBLOC	500 V	10 V		312 nC	SOT-227	MOSFET (Metal Oxide)	N-Channel	30 V	44 A	-55 °C	150 °C		450 W	7410 pF
Microchip Technology APT5010B2VRG	100 mOhm	Through Hole	4 V	TO-247-3 Variant	500 V				T-MAX™ [B2]	MOSFET (Metal Oxide)	N-Channel		47 A					8900 pF	470 nC
Microchip Technology APT5015BVRG		Through Hole		TO-247-3	500 V				TO-247 [B]	MOSFET (Metal Oxide)	N-Channel		32 A			5280 pF			300 nC	150 mOhm
Microchip Technology APT50M50JVR		Chassis Mount	4 V	SOT-227-4 miniBLOC	500 V				ISOTOP®	MOSFET (Metal Oxide)	N-Channel		77 A			19600 pF			1000 nC	50 mOhm
Microchip Technology APT5017BVFRG		Through Hole		TO-247-3	500 V				TO-247 [B]	MOSFET (Metal Oxide)	N-Channel		30 A			5280 pF			300 nC
Microchip Technology APT50M50JVFR		Chassis Mount	4 V	SOT-227-4 miniBLOC	500 V				ISOTOP®	MOSFET (Metal Oxide)	N-Channel		77 A			19600 pF			1000 nC	50 mOhm
Microchip Technology APT5018SLLG	180 mOhm	Surface Mount		D3PAK (2 Leads + Tab) TO-268-3 TO-268AA	500 V				D3PAK	MOSFET (Metal Oxide)	N-Channel		27 A			2596 pF			58 nC
Microchip Technology APT50M38JLL		Chassis Mount		SOT-227-4 miniBLOC	500 V	10 V	694 W	270 nC	ISOTOP®	MOSFET (Metal Oxide)	N-Channel	30 V	88 A	-55 °C	150 °C	12000 pF					5 V
Microchip Technology APT5024BFLLG		Through Hole		TO-247-3	500 V			43 nC	TO-247 [B]	MOSFET (Metal Oxide)	N-Channel		22 A			1900 pF				240 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	1	$ 35.97
		100	$ 29.98
Microchip Direct	N/A	1	$ 35.97
		50	$ 29.97
		100	$ 26.38
		250	$ 25.66
		500	$ 24.94
		1000	$ 23.98
		5000	$ 22.54
Newark	Each	1	$ 28.78
		50	$ 27.82
		100	$ 26.86
		250	$ 26.86
		500	$ 26.86

Description

General part information

APT5010JVRU2-Module Series

Power MOS 8™ is a family of high speed, high voltage (500-1200 V) N-channel

switch-mode power transistors with lower EMI characteristics and lower cost

compared to previous generation devices. These MOSFETs / FREDFETs have been

Documents

Technical documentation and resources

APT5010JVRU2

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APT5010JVRU2

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Technical Specifications

APT5010JVRU2-Module Series

Pricing

Description

APT5010JVRU2-Module Series

Documents

Product Change Notice EN

Mounting Considerations for the SOT-227 Package

APT5010JVRU2 Datasheet

High-Voltage Power Discretes and Modules

APT5010JVRU2-Module Series