APT5010JVRU2-Module Series

500V/Boost chopper/Si Mosfet modules

Catalog

500V/Boost chopper/Si Mosfet modules

Part	Rds On (Max) @ Id, Vgs	Mounting Type	Vgs(th) (Max) @ Id	Package / Case	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Technology	FET Type	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs [Max]	Vgs(th) (Max) @ Id [Max]
Microchip Technology APT5010LLLG	100 mOhm	Through Hole	5 V	TO-264-3 TO-264AA	500 V	10 V	520 W	95 nC	TO-264 [L]	MOSFET (Metal Oxide)	N-Channel	30 V	46 A	-55 °C	150 °C	4360 pF
Microchip Technology APT5010JVRU2	100 mOhm	Chassis Mount	4 V	SOT-227-4 miniBLOC	500 V	10 V		312 nC	SOT-227	MOSFET (Metal Oxide)	N-Channel	30 V	44 A	-55 °C	150 °C		450 W	7410 pF
Microchip Technology APT5010B2VRG	100 mOhm	Through Hole	4 V	TO-247-3 Variant	500 V				T-MAX™ [B2]	MOSFET (Metal Oxide)	N-Channel		47 A					8900 pF	470 nC
Microchip Technology APT5015BVRG		Through Hole		TO-247-3	500 V				TO-247 [B]	MOSFET (Metal Oxide)	N-Channel		32 A			5280 pF			300 nC	150 mOhm
Microchip Technology APT50M50JVR		Chassis Mount	4 V	SOT-227-4 miniBLOC	500 V				ISOTOP®	MOSFET (Metal Oxide)	N-Channel		77 A			19600 pF			1000 nC	50 mOhm
Microchip Technology APT5017BVFRG		Through Hole		TO-247-3	500 V				TO-247 [B]	MOSFET (Metal Oxide)	N-Channel		30 A			5280 pF			300 nC
Microchip Technology APT50M50JVFR		Chassis Mount	4 V	SOT-227-4 miniBLOC	500 V				ISOTOP®	MOSFET (Metal Oxide)	N-Channel		77 A			19600 pF			1000 nC	50 mOhm
Microchip Technology APT5018SLLG	180 mOhm	Surface Mount		D3PAK (2 Leads + Tab) TO-268-3 TO-268AA	500 V				D3PAK	MOSFET (Metal Oxide)	N-Channel		27 A			2596 pF			58 nC
Microchip Technology APT50M38JLL		Chassis Mount		SOT-227-4 miniBLOC	500 V	10 V	694 W	270 nC	ISOTOP®	MOSFET (Metal Oxide)	N-Channel	30 V	88 A	-55 °C	150 °C	12000 pF					5 V
Microchip Technology APT5024BFLLG		Through Hole		TO-247-3	500 V			43 nC	TO-247 [B]	MOSFET (Metal Oxide)	N-Channel		22 A			1900 pF				240 mOhm

Catalog

500V/Boost chopper/Si Mosfet modules

Key Features

• * Power Semiconductors, Power Modules and RF Power MOSFETs Catalog

• * Eliminating Parasitic Oscillation between Parallel MOSFETs

• * High Frequency Resonant Half Bridge

• * Improved Power MOSFETS Boost Efficiency IN A 3.5kw Single Phase PFC

• * Introduction to MOSFETs

• * Latest Technology PT IGBTs vs. Power MOSFETs

• * Making Use of Gate Charge Information In MOSFET and IGBT Data Sheets

• * Optimizing MOSFET and IGBT Gate Current to Minimize dv/dt Induced Failures in SMPS Circuits

• * Turn Off Snubber Design for High Frequency Modules

• * VDS(on) VCE(sat) Measurement

Description

Power MOS 8™ is a family of high speed, high voltage (500-1200 V) N-channel switch-mode power transistors with lower EMI characteristics and lower cost compared to previous generation devices. These MOSFETs / FREDFETs have been optimized for both hard and soft switching in high frequency, high voltage applications rated above 500 W. The Power MOS 8™ series is a result of extensive research into quiet switching. Input and reverse transfer capacitance values as well as their ratio were set at specific values to achieve quiet switching with minimal switching loss. The Power MOS 8™ series of devices are inherently quiet switching, stable when connected in parallel, very efficient, and lower cost than previous generations. Power MOS 7® is a family of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON)and Qg. Power MOS 7® combines lower conduction and switching losses along with exceptionally fast switching speeds. Power MOS V® can still provide the best trade-off between performance and cost in some applications. Power MOS V® utilizes a low resistance aluminum metal gate structure. This allows for faster gate signal propagation than is possible with conventional polysilicon gate structures. The result is extremely low internal chip equivalent gate resistances (EGR) that are up to an order of magnitude lower than competitive devices which enables uniform high speed switching across the entire chip. Body Diode Options MOSFETs and FREDFETs are available in all voltage ratings. A FREDFET is a MOSFET with a faster recovery intrinsic body diode. This results in improved reliability in ZVS circuits due to shorter minority carrier lifetime and increased commutation dv/dt ruggedness. If a fast recovery body diode is not needed, MOSFET versions are available.