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APTM100UM65SAG
Discrete Semiconductor Products

APTM100UM65SAG

Active
Microchip Technology

POWER FIELD-EFFECT TRANSISTOR, 145A I(D), 1000V, 0.078OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET

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APTM100UM65SAG
Discrete Semiconductor Products

APTM100UM65SAG

Active
Microchip Technology

POWER FIELD-EFFECT TRANSISTOR, 145A I(D), 1000V, 0.078OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET

Technical Specifications

Parameters and characteristics for this part

SpecificationAPTM100UM65SAG
Current - Continuous Drain (Id) @ 25°C145 A
Drain to Source Voltage (Vdss)1000 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]1068 nC
Input Capacitance (Ciss) (Max) @ Vds28500 pF
Mounting TypeChassis Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-40 °C
Package / CaseSP6
Power Dissipation (Max)3250 W
Rds On (Max) @ Id, Vgs78 mOhm
Supplier Device PackageSP6
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 1$ 363.32
Microchip DirectN/A 1$ 363.32
50$ 301.04
100$ 269.90
250$ 259.51
500$ 228.37
1000$ 207.61
5000$ 182.70
NewarkEach 1$ 363.32
5$ 249.13
50$ 240.83
100$ 232.52
250$ 232.52
500$ 232.52

Description

General part information

APTM100UM65SCAVG-Module Series

* FREDFETs

* Low RDSon

* Low input and Miller capacitance