APTM100UM60FAG

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Microchip Technology

1000V/SINGLE SWITCH/SI MOSFET MODULES

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Discrete Semiconductor Products

APTM100UM60FAG

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Microchip Technology

1000V/SINGLE SWITCH/SI MOSFET MODULES

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DocumentsDatasheet APTM100UM60FAG Datasheet +1

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Technical Specifications

Parameters and characteristics for this part

Specification	APTM100UM60FAG

Current - Continuous Drain (Id) @ 25°C	129 A
Drain to Source Voltage (Vdss)	1000 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	1116 nC
Input Capacitance (Ciss) (Max) @ Vds	31100 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	SP6
Power Dissipation (Max) [Max]	2272 W
Rds On (Max) @ Id, Vgs	70 mOhm
Supplier Device Package	SP6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

APTM100UM65SCAVG-Module Series

1000V/Single switch + series and parallel diode/Si MOSFET

Part	Mounting Type	Package / Case	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Power - Max [Max]	Configuration	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs [Max]	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	FET Type	Configuration	Power Dissipation (Max)
Microchip Technology APTM100A23STG	Chassis Mount	SP4	36 A	5 V	150 °C	-40 °C	1 kV	1000 V	308 nC	270 mOhm	MOSFET (Metal Oxide)	8700 pF	SP4	694 W	2 N-Channel (Half Bridge)
Microchip Technology APTM100A18FTG	Chassis Mount	SP4	43 A	5 V	150 °C	-40 °C	1 kV	1000 V		210 mOhm	MOSFET (Metal Oxide)		SP4	780 W	2 N-Channel (Half Bridge)	372 nC	10400 pF
Microchip Technology APTM100AM90FG	Chassis Mount	SP6	78 A		150 °C	-40 °C	1 kV	1000 V			MOSFET (Metal Oxide)		SP6	1250 W	2 N-Channel (Half Bridge)	744 nC	20700 pF	5 V	105 mOhm
Microchip Technology APTM100UM60FAG	Chassis Mount	SP6	129 A		150 °C	-40 °C		1000 V		70 mOhm	MOSFET (Metal Oxide)		SP6			1116 nC	31100 pF	5 V		30 V	10 V	2272 W	N-Channel
Microchip Technology APTM100UM45FAG	Chassis Mount	SP6	215 A		150 °C	-40 °C		1000 V		52 mOhm	MOSFET (Metal Oxide)		SP6			1602 nC		5 V		30 V	10 V	5000 W	N-Channel
Microchip Technology APTM100DSK35T3G	Chassis Mount	SP3	22 A		150 °C	-40 °C	1 kV	1000 V	186 nC	420 mOhm	MOSFET (Metal Oxide)		SP3	390 W	2 N-Channel (Dual)		5200 pF	5 V
Microchip Technology APTM100H45SCTG	Chassis Mount	SP4	18 A		150 °C	-40 °C	1 kV	1000 V		540 mOhm	MOSFET (Metal Oxide)	4350 pF	SP4	357 W		154 nC		5 V						4 N-Channel
Microchip Technology APTM100UM65SAG	Chassis Mount	SP6	145 A		150 °C	-40 °C		1000 V	1068 nC	78 mOhm	MOSFET (Metal Oxide)		SP6				28500 pF	5 V		30 V	10 V		N-Channel		3250 W
Microchip Technology APTM100UM65SCAVG	Chassis Mount	Module	145 A		150 °C	-40 °C		1000 V	1068 nC	78 mOhm	MOSFET (Metal Oxide)		SP6				28500 pF	5 V		30 V	10 V		N-Channel		3250 W
Microchip Technology APTM100H46FT3G	Chassis Mount	SP3	19 A		150 °C	-40 °C	1 kV	1000 V		552 mOhm	MOSFET (Metal Oxide)		SP3	357 W		260 nC	6800 pF	5 V						4 N-Channel