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Discrete Semiconductor Products

APTM100H46FT3G

Active
Microchip Technology

1000V/FULL BRIDGE/SI MOSFET MODULES

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Discrete Semiconductor Products

APTM100H46FT3G

Active
Microchip Technology

1000V/FULL BRIDGE/SI MOSFET MODULES

Technical Specifications

Parameters and characteristics for this part

SpecificationAPTM100H46FT3G
Configuration4 N-Channel
Current - Continuous Drain (Id) @ 25°C19 A
Drain to Source Voltage (Vdss)1 kV
Drain to Source Voltage (Vdss)1000 V
Gate Charge (Qg) (Max) @ Vgs260 nC
Input Capacitance (Ciss) (Max) @ Vds6800 pF
Mounting TypeChassis Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-40 °C
Package / CaseSP3
Power - Max [Max]357 W
Rds On (Max) @ Id, Vgs552 mOhm
Supplier Device PackageSP3
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 12$ 103.68
Microchip DirectN/A 1$ 103.68
50$ 85.91
100$ 77.02
250$ 74.06
500$ 65.17
1000$ 59.25
5000$ 52.14

Description

General part information

APTM100UM65SCAVG-Module Series

* FREDFETs

* Low RDSon

* Low input and Miller capacitance