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Discrete Semiconductor Products

APTM100A23STG

Active
Microchip Technology

1000V/PHASE LEG + SERIES AND PARALLEL DIODE/SI MOSFET

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Discrete Semiconductor Products

APTM100A23STG

Active
Microchip Technology

1000V/PHASE LEG + SERIES AND PARALLEL DIODE/SI MOSFET

Technical Specifications

Parameters and characteristics for this part

SpecificationAPTM100A23STG
Configuration2 N-Channel (Half Bridge)
Current - Continuous Drain (Id) @ 25°C36 A
Drain to Source Voltage (Vdss)1 kV
Drain to Source Voltage (Vdss)1000 V
Gate Charge (Qg) (Max) @ Vgs [Max]308 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]8700 pF
Mounting TypeChassis Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-40 °C
Package / CaseSP4
Power - Max [Max]694 W
Rds On (Max) @ Id, Vgs270 mOhm
Supplier Device PackageSP4
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id [Max]5 V

APTM100UM65SCAVG-Module Series

1000V/Single switch + series and parallel diode/Si MOSFET

PartMounting TypePackage / CaseCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ Id [Max]Operating Temperature [Max]Operating Temperature [Min]Drain to Source Voltage (Vdss)Drain to Source Voltage (Vdss)Gate Charge (Qg) (Max) @ Vgs [Max]Rds On (Max) @ Id, VgsTechnologyInput Capacitance (Ciss) (Max) @ Vds [Max]Supplier Device PackagePower - Max [Max]ConfigurationGate Charge (Qg) (Max) @ VgsInput Capacitance (Ciss) (Max) @ VdsVgs(th) (Max) @ IdRds On (Max) @ Id, Vgs [Max]Vgs (Max)Drive Voltage (Max Rds On, Min Rds On)Power Dissipation (Max) [Max]FET TypeConfigurationPower Dissipation (Max)
Microchip Technology
Chassis Mount
SP4
36 A
5 V
150 °C
-40 °C
1 kV
1000 V
308 nC
270 mOhm
MOSFET (Metal Oxide)
8700 pF
SP4
694 W
2 N-Channel (Half Bridge)
APTM100A18FTG
Microchip Technology
Chassis Mount
SP4
43 A
5 V
150 °C
-40 °C
1 kV
1000 V
210 mOhm
MOSFET (Metal Oxide)
SP4
780 W
2 N-Channel (Half Bridge)
372 nC
10400 pF
APTM100AM90FG
Microchip Technology
Chassis Mount
SP6
78 A
150 °C
-40 °C
1 kV
1000 V
MOSFET (Metal Oxide)
SP6
1250 W
2 N-Channel (Half Bridge)
744 nC
20700 pF
5 V
105 mOhm
Microchip Technology
Chassis Mount
SP6
129 A
150 °C
-40 °C
1000 V
70 mOhm
MOSFET (Metal Oxide)
SP6
1116 nC
31100 pF
5 V
30 V
10 V
2272 W
N-Channel
APTM100UM45FAG
Microchip Technology
Chassis Mount
SP6
215 A
150 °C
-40 °C
1000 V
52 mOhm
MOSFET (Metal Oxide)
SP6
1602 nC
5 V
30 V
10 V
5000 W
N-Channel
Microchip Technology
Chassis Mount
SP3
22 A
150 °C
-40 °C
1 kV
1000 V
186 nC
420 mOhm
MOSFET (Metal Oxide)
SP3
390 W
2 N-Channel (Dual)
5200 pF
5 V
APTM50HM75STG
Microchip Technology
Chassis Mount
SP4
18 A
150 °C
-40 °C
1 kV
1000 V
540 mOhm
MOSFET (Metal Oxide)
4350 pF
SP4
357 W
154 nC
5 V
4 N-Channel
APTM100UM65SAG
Microchip Technology
Chassis Mount
SP6
145 A
150 °C
-40 °C
1000 V
1068 nC
78 mOhm
MOSFET (Metal Oxide)
SP6
28500 pF
5 V
30 V
10 V
N-Channel
3250 W
Microchip Technology
Chassis Mount
Module
145 A
150 °C
-40 °C
1000 V
1068 nC
78 mOhm
MOSFET (Metal Oxide)
SP6
28500 pF
5 V
30 V
10 V
N-Channel
3250 W
Microchip Technology
Chassis Mount
SP3
19 A
150 °C
-40 °C
1 kV
1000 V
552 mOhm
MOSFET (Metal Oxide)
SP3
357 W
260 nC
6800 pF
5 V
4 N-Channel

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 7$ 200.87
Microchip DirectN/A 1$ 200.87
50$ 166.43
100$ 149.22
250$ 143.48
500$ 126.26
1000$ 114.78
5000$ 101.01
NewarkEach 5$ 137.74
50$ 133.14
100$ 128.55
250$ 128.55
500$ 128.55

Description

General part information

APTM100UM65SCAVG-Module Series

* FREDFETs

* Low RDSon

* Low input and Miller capacitance