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STMICROELECTRONICS STD6N95K5
Discrete Semiconductor Products

FERD20H100SB-TR

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STMicroelectronics

STANDARD RECOVERY DIODE, 100 V, 20 A, SINGLE, 655 MV, 150 A

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STMICROELECTRONICS STD6N95K5
Discrete Semiconductor Products

FERD20H100SB-TR

Active
STMicroelectronics

STANDARD RECOVERY DIODE, 100 V, 20 A, SINGLE, 655 MV, 150 A

Deep-Dive with AI

Documents+7

Technical Specifications

Parameters and characteristics for this part

SpecificationFERD20H100SB-TR
Current - Reverse Leakage @ Vr140 µA
Mounting TypeSurface Mount
Operating Temperature - Junction [Max]175 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Speed200 mA, 500 ns
Supplier Device PackageDPAK
TechnologyFERD (Field Effect Rectifier Diode)
Voltage - DC Reverse (Vr) (Max) [Max]100 V
Voltage - Forward (Vf) (Max) @ If705 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.91
10$ 0.79
100$ 0.54
500$ 0.45
1000$ 0.39
Digi-Reel® 1$ 0.91
10$ 0.79
100$ 0.54
500$ 0.45
1000$ 0.39
Tape & Reel (TR) 2500$ 0.34
5000$ 0.33
12500$ 0.30
25000$ 0.30

Description

General part information

FERD20H100S Series

The device is based on a proprietary technology that achieves the best in class VF/IRtrade-off for a given silicon surface.

This 100 V rectifier has been optimized for use in confined casing applications where both efficiency and thermal performance matter.

With a lower dependency of leakage current (IR) and forward voltage (VF) in function of temperature, the thermal runaway risk is reduced. Therefore, it can advantageously replace 100 V Schottky diodes.