Specification	FERD20S100SH

Current - Reverse Leakage @ Vr	100 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Speed	200 mA, 500 ns
Supplier Device Package	TO-251 (IPAK)
Technology	FERD (Field Effect Rectifier Diode)
Voltage - DC Reverse (Vr) (Max) [Max]	100 V
Voltage - Forward (Vf) (Max) @ If	780 mV

FERD20H100S Series

50 V, 20 A Power FLAT Ultra-Low Vf Field-Effect Rectifier Diode (FERD)

Part	Operating Temperature - Junction [Max]	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Package / Case	Technology	Speed	Mounting Type	Diode Configuration	Operating Temperature - Junction	Current - Average Rectified (Io) (per Diode)	Speed
STMicroelectronics FERD20H100SB-TR	175 °C	140 µA	100 V	DPAK	705 mV	DPAK (2 Leads + Tab) SC-63 TO-252-3	FERD (Field Effect Rectifier Diode)	200 mA 500 ns	Surface Mount
STMicroelectronics FERD20H100STS	175 °C	140 µA	100 V	TO-220	705 mV	TO-220-3	FERD (Field Effect Rectifier Diode)	200 mA 500 ns	Through Hole
STMicroelectronics FERD20S100SH	175 °C	100 µA	100 V	TO-251 (IPAK)	780 mV	IPAK TO-251-3 Short Leads TO-251AA	FERD (Field Effect Rectifier Diode)	200 mA 500 ns	Through Hole
STMicroelectronics FERD20L60CG-TR		970 µA	60 V	D2PAK	575 mV	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	FERD (Field Effect Rectifier Diode)		Surface Mount	1 Pair Common Cathode	150 °C	10 A	No Recovery Time
STMicroelectronics FERD20U50DJF-TR		800 µA	50 V	PowerFlat™ (5x6)	510 mV	8-PowerVDFN	FERD (Field Effect Rectifier Diode)	200 mA 500 ns	Surface Mount		150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FERD20H100S Series

The device is based on a proprietary technology that achieves the best in class VF/IRtrade-off for a given silicon surface.

This 100 V rectifier has been optimized for use in confined casing applications where both efficiency and thermal performance matter.

With a lower dependency of leakage current (IR) and forward voltage (VF) in function of temperature, the thermal runaway risk is reduced. Therefore, it can advantageously replace 100 V Schottky diodes.