Catalog
100 V, 20 A Field-Effect Rectifier Diode (FERD)
Description
AI
The device is based on a proprietary technology that achieves the best in class VF/IRtrade-off for a given silicon surface.
This 100 V rectifier has been optimized for use in confined casing applications where both efficiency and thermal performance matter.
With a lower dependency of leakage current (IR) and forward voltage (VF) in function of temperature, the thermal runaway risk is reduced. Therefore, it can advantageously replace 100 V Schottky diodes.