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LITTELFUSE LJ6008D8TP
Discrete Semiconductor Products

FERD20L60CG-TR

Active
STMicroelectronics

STANDARD RECOVERY DIODE, 60 V, 20 A, DUAL COMMON CATHODE, 535 MV, 140 A

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DocumentsAN5046+6
LITTELFUSE LJ6008D8TP
Discrete Semiconductor Products

FERD20L60CG-TR

Active
STMicroelectronics

STANDARD RECOVERY DIODE, 60 V, 20 A, DUAL COMMON CATHODE, 535 MV, 140 A

Deep-Dive with AI

DocumentsAN5046+6

Technical Specifications

Parameters and characteristics for this part

SpecificationFERD20L60CG-TR
Current - Average Rectified (Io) (per Diode)10 A
Current - Reverse Leakage @ Vr970 µA
Diode Configuration1 Pair Common Cathode
Mounting TypeSurface Mount
Operating Temperature - Junction150 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
SpeedNo Recovery Time
Supplier Device PackageD2PAK
TechnologyFERD (Field Effect Rectifier Diode)
Voltage - DC Reverse (Vr) (Max) [Max]60 V
Voltage - Forward (Vf) (Max) @ If575 mV

FERD20H100S Series

50 V, 20 A Power FLAT Ultra-Low Vf Field-Effect Rectifier Diode (FERD)

PartOperating Temperature - Junction [Max]Current - Reverse Leakage @ VrVoltage - DC Reverse (Vr) (Max) [Max]Supplier Device PackageVoltage - Forward (Vf) (Max) @ IfPackage / CaseTechnologySpeedMounting TypeDiode ConfigurationOperating Temperature - JunctionCurrent - Average Rectified (Io) (per Diode)Speed
STMICROELECTRONICS STD6N95K5
STMicroelectronics
FERD20H100SB-TR
175 °C
140 µA
100 V
DPAK
705 mV
DPAK (2 Leads + Tab)
SC-63
TO-252-3
FERD (Field Effect Rectifier Diode)
200 mA
500 ns
Surface Mount
TO-220-3
STMicroelectronics
FERD20H100STS
175 °C
140 µA
100 V
TO-220
705 mV
TO-220-3
FERD (Field Effect Rectifier Diode)
200 mA
500 ns
Through Hole
FERD20S100SH
STMicroelectronics
FERD20S100SH
175 °C
100 µA
100 V
TO-251 (IPAK)
780 mV
IPAK
TO-251-3 Short Leads
TO-251AA
FERD (Field Effect Rectifier Diode)
200 mA
500 ns
Through Hole
LITTELFUSE LJ6008D8TP
STMicroelectronics
FERD20L60CG-TR
970 µA
60 V
D2PAK
575 mV
D2PAK (2 Leads + Tab)
TO-263-3
TO-263AB
FERD (Field Effect Rectifier Diode)
Surface Mount
1 Pair Common Cathode
150 °C
10 A
No Recovery Time
8PowerVDFN
STMicroelectronics
FERD20U50DJF-TR
800 µA
50 V
PowerFlat™ (5x6)
510 mV
8-PowerVDFN
FERD (Field Effect Rectifier Diode)
200 mA
500 ns
Surface Mount
150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.86
10$ 0.70
100$ 0.55
500$ 0.46
Digi-Reel® 1$ 0.86
10$ 0.70
100$ 0.55
500$ 0.46
Tape & Reel (TR) 1000$ 0.46
NewarkEach (Supplied on Cut Tape) 1$ 1.69
10$ 1.30
25$ 1.21
50$ 1.11
100$ 1.02
250$ 0.94
500$ 0.86
1000$ 0.72

Description

General part information

FERD20H100S Series

The device is based on a proprietary technology that achieves the best in class VF/IRtrade-off for a given silicon surface.

This 100 V rectifier has been optimized for use in confined casing applications where both efficiency and thermal performance matter.

With a lower dependency of leakage current (IR) and forward voltage (VF) in function of temperature, the thermal runaway risk is reduced. Therefore, it can advantageously replace 100 V Schottky diodes.