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TO-247-3-PKG-Series
Discrete Semiconductor Products

APT20M34BLLG

Active
Microchip Technology

POWER FIELD-EFFECT TRANSISTOR, 74A I(D), 200V, 0.034OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-247AD

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TO-247-3-PKG-Series
Discrete Semiconductor Products

APT20M34BLLG

Active
Microchip Technology

POWER FIELD-EFFECT TRANSISTOR, 74A I(D), 200V, 0.034OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-247AD

Technical Specifications

Parameters and characteristics for this part

SpecificationAPT20M34BLLG
Current - Continuous Drain (Id) @ 25°C74 A
Drain to Source Voltage (Vdss)200 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]60 nC
Input Capacitance (Ciss) (Max) @ Vds3660 pF
Mounting TypeThrough Hole
Package / CaseTO-247-3
Rds On (Max) @ Id, Vgs34 mOhm
Supplier Device PackageTO-247 [B]
TechnologyMOSFET (Metal Oxide)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 40$ 14.18
Microchip DirectTUBE 1$ 14.18
100$ 12.23
250$ 11.79
500$ 11.52
1000$ 11.24
5000$ 10.87

Description

General part information

MOSFET-200V Series

Power MOS 7® is a family of low loss, high voltage, N-Channel enhancement

mode power MOSFETS. Both conduction and switching losses are addressed with

Power MOS 7® by significantly lowering RDS(ON)and Qg. Power MOS 7® combines