
Discrete Semiconductor Products
APT20M22JVRU3
ActiveMicrochip Technology
TRANS MOSFET N-CH 200V 97A 4-PIN SOT-227 TUBE
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Discrete Semiconductor Products
APT20M22JVRU3
ActiveMicrochip Technology
TRANS MOSFET N-CH 200V 97A 4-PIN SOT-227 TUBE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | APT20M22JVRU3 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 97 A |
| Drain to Source Voltage (Vdss) | 200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 290 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 8500 pF |
| Mounting Type | Chassis Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-227-4, miniBLOC |
| Power Dissipation (Max) | 450 W |
| Rds On (Max) @ Id, Vgs | 22 mOhm |
| Supplier Device Package | SOT-227 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 32 | $ 33.19 | |
Description
General part information
MOSFET-200V Series
Power MOS 7® is a family of low loss, high voltage, N-Channel enhancement
mode power MOSFETS. Both conduction and switching losses are addressed with
Power MOS 7® by significantly lowering RDS(ON)and Qg. Power MOS 7® combines
Documents
Technical documentation and resources