Specification	APT20M11JVR

Current - Continuous Drain (Id) @ 25°C	175 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	180 nC
Input Capacitance (Ciss) (Max) @ Vds	21600 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-227-4, miniBLOC
Power Dissipation (Max) [Max]	700 W
Rds On (Max) @ Id, Vgs	11 mOhm
Supplier Device Package	ISOTOP®
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

MOSFET-200V Series

200V/Boost chopper/Si Mosfet modules

Part	Current - Continuous Drain (Id) @ 25°C	FET Type	Mounting Type	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Vgs (Max)	Supplier Device Package	Vgs(th) (Max) @ Id	Package / Case	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]
Microchip Technology APT20M11JVR	175 A	N-Channel	Chassis Mount	11 mOhm	10 V	200 V	30 V	ISOTOP®	4 V	SOT-227-4 miniBLOC	700 W	180 nC	MOSFET (Metal Oxide)	-55 °C	150 °C	21600 pF
Microchip Technology APT20M20JLL	104 A	N-Channel	Chassis Mount			200 V		ISOTOP®	5 V	SOT-227-4 miniBLOC			MOSFET (Metal Oxide)			6850 pF	20 mOhm	110 nC
Microchip Technology APT20M45SVRG	56 A	N-Channel	Surface Mount	45 mOhm		200 V		D3PAK		D3PAK (2 Leads + Tab) TO-268-3 TO-268AA			MOSFET (Metal Oxide)			4860 pF		195 nC
Microchip Technology APT20M18LVRG	100 A	N-Channel	Through Hole			200 V		TO-264 [L]	4 V	TO-264-3 TO-264AA		330 nC	MOSFET (Metal Oxide)			9880 pF	18 mOhm
Microchip Technology APT20M34BLLG	74 A	N-Channel	Through Hole	34 mOhm		200 V		TO-247 [B]		TO-247-3			MOSFET (Metal Oxide)			3660 pF		60 nC
Microchip Technology APT20M45SVFRG	56 A	N-Channel	Surface Mount	45 mOhm		200 V		D3PAK		D3PAK (2 Leads + Tab) TO-268-3 TO-268AA			MOSFET (Metal Oxide)			4860 pF		195 nC
Microchip Technology APT20M34SLLG/TR	74 A	N-Channel	Surface Mount	34 mOhm	10 V	200 V	30 V	D3PAK		D3PAK (2 Leads + Tab) TO-268-3 TO-268AA			MOSFET (Metal Oxide)	-55 °C	150 °C	3660 pF		60 nC	403 W
Microchip Technology APT20M22JVRU3	97 A	N-Channel	Chassis Mount	22 mOhm	10 V	200 V	30 V	SOT-227	4 V	SOT-227-4 miniBLOC		290 nC	MOSFET (Metal Oxide)	-55 °C	150 °C				450 W	8500 pF
Microchip Technology APT20M18LVFRG	100 A	N-Channel	Through Hole			200 V		TO-264 [L]	4 V	TO-264-3 TO-264AA		330 nC	MOSFET (Metal Oxide)			9880 pF	18 mOhm
Microchip Technology APT20M38BVRG	67 A	N-Channel	Through Hole	38 mOhm	10 V	200 V	30 V	TO-247 [B]		TO-247-3	370 W		MOSFET (Metal Oxide)	-55 °C	150 °C	6120 pF		225 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Arrow	N/A	1	$ 71.96
Digikey	Tube	1	$ 72.33
		100	$ 58.73
Microchip Direct	TUBE	1	$ 72.33
		100	$ 62.49
		250	$ 60.13
		500	$ 58.73
		1000	$ 57.31
		5000	$ 55.43

Description

General part information

MOSFET-200V Series

Power MOS 7® is a family of low loss, high voltage, N-Channel enhancement

mode power MOSFETS. Both conduction and switching losses are addressed with

Power MOS 7® by significantly lowering RDS(ON)and Qg. Power MOS 7® combines

Documents

Technical documentation and resources

APT20M11JVR

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Technical Specifications

MOSFET-200V Series

Pricing

Description

MOSFET-200V Series

Documents

High-Voltage Power Discretes and Modules

Datasheet

APT20M11JLL MOSFET MOS7 200 V 11 mOhm SOT-227 Datasheet

APT20M20JLL MOSFET MOS7 200 V 20 mOhm SOT-227 Datasheet

APT20M18B2VRG, APT20M18LVRG MOSFET MOS5 200 V 18 mOhm TO-247 MAX Datasheet

APT20M16B2LLG, APT20M16LLLG MOSFET MOS7 200 V 16 mOhm TO-247 MAX Datasheet

APT20M11JVR MOSFET MOS5 200 V 11 mOhm SOT-227 Datasheet

APT20M20B2LLG, APT20M20LLLG MOSFET MOS7 200 V 20 mOhm TO-247 MAX Datasheet

MOSFET-200V Series