MOSFET-200V Series

200V/Boost chopper/Si Mosfet modules

Catalog

200V/Boost chopper/Si Mosfet modules

Part	Current - Continuous Drain (Id) @ 25°C	FET Type	Mounting Type	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Vgs (Max)	Supplier Device Package	Vgs(th) (Max) @ Id	Package / Case	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]
Microchip Technology APT20M11JVR	175 A	N-Channel	Chassis Mount	11 mOhm	10 V	200 V	30 V	ISOTOP®	4 V	SOT-227-4 miniBLOC	700 W	180 nC	MOSFET (Metal Oxide)	-55 °C	150 °C	21600 pF
Microchip Technology APT20M20JLL	104 A	N-Channel	Chassis Mount			200 V		ISOTOP®	5 V	SOT-227-4 miniBLOC			MOSFET (Metal Oxide)			6850 pF	20 mOhm	110 nC
Microchip Technology APT20M45SVRG	56 A	N-Channel	Surface Mount	45 mOhm		200 V		D3PAK		D3PAK (2 Leads + Tab) TO-268-3 TO-268AA			MOSFET (Metal Oxide)			4860 pF		195 nC
Microchip Technology APT20M18LVRG	100 A	N-Channel	Through Hole			200 V		TO-264 [L]	4 V	TO-264-3 TO-264AA		330 nC	MOSFET (Metal Oxide)			9880 pF	18 mOhm
Microchip Technology APT20M34BLLG	74 A	N-Channel	Through Hole	34 mOhm		200 V		TO-247 [B]		TO-247-3			MOSFET (Metal Oxide)			3660 pF		60 nC
Microchip Technology APT20M45SVFRG	56 A	N-Channel	Surface Mount	45 mOhm		200 V		D3PAK		D3PAK (2 Leads + Tab) TO-268-3 TO-268AA			MOSFET (Metal Oxide)			4860 pF		195 nC
Microchip Technology APT20M34SLLG/TR	74 A	N-Channel	Surface Mount	34 mOhm	10 V	200 V	30 V	D3PAK		D3PAK (2 Leads + Tab) TO-268-3 TO-268AA			MOSFET (Metal Oxide)	-55 °C	150 °C	3660 pF		60 nC	403 W
Microchip Technology APT20M22JVRU3	97 A	N-Channel	Chassis Mount	22 mOhm	10 V	200 V	30 V	SOT-227	4 V	SOT-227-4 miniBLOC		290 nC	MOSFET (Metal Oxide)	-55 °C	150 °C				450 W	8500 pF
Microchip Technology APT20M18LVFRG	100 A	N-Channel	Through Hole			200 V		TO-264 [L]	4 V	TO-264-3 TO-264AA		330 nC	MOSFET (Metal Oxide)			9880 pF	18 mOhm
Microchip Technology APT20M38BVRG	67 A	N-Channel	Through Hole	38 mOhm	10 V	200 V	30 V	TO-247 [B]		TO-247-3	370 W		MOSFET (Metal Oxide)	-55 °C	150 °C	6120 pF		225 nC

Catalog

200V/Boost chopper/Si Mosfet modules

Key Features

• * Power Semiconductors, Power Modules and RF Power MOSFETs Catalog

• * Eliminating Parasitic Oscillation between Parallel MOSFETs

• * High Frequency Resonant Half Bridge

• * Improved Power MOSFETS Boost Efficiency IN A 3.5kw Single Phase PFC

• * Introduction to MOSFETs

• * Latest Technology PT IGBTs vs. Power MOSFETs

• * Making Use of Gate Charge Information In MOSFET and IGBT Data Sheets

• * Optimizing MOSFET and IGBT Gate Current to Minimize dv/dt Induced Failures in SMPS Circuits

• * Turn Off Snubber Design for High Frequency Modules

• * VDS(on) VCE(sat) Measurement

Description

Power MOS 7® is a family of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON)and Qg. Power MOS 7® combines lower conduction and switching losses along with exceptionally fast switching speeds. Power MOS V® can still provide the best trade-off between performance and cost in some applications. Power MOS V® utilizes a low resistance aluminum metal gate structure. This allows for faster gate signal propagation than is possible with conventional polysilicon gate structures. The result is extremely low internal chip equivalent gate resistances (EGR) that are up to an order of magnitude lower than competitive devices which enables uniform high speed switching across the entire chip. Body Diode Options MOSFETs and FREDFETs are available in all voltage ratings. A FREDFET is a MOSFET with a faster recovery intrinsic body diode. This results in improved reliability in ZVS circuits due to shorter minority carrier lifetime and increased commutation dv/dt ruggedness. If a fast recovery body diode is not needed, MOSFET versions are available.