
Deep-Dive with AI
Search across all available documentation for this part.
DocumentsDatasheet

Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | PBSS4160TVL |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 1 A |
| Current - Collector Cutoff (Max) [Max] | 100 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 250 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | SOT-23-3, TO-236-3, SC-59 |
| Power - Max [Max] | 400 mW |
| Supplier Device Package | TO-236AB |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 250 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 60 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 0.06 | |
| 99000 | $ 0.06 | |||
| Tape & Reel (TR) | 10000 | $ 0.05 | ||
| 20000 | $ 0.05 | |||
| 30000 | $ 0.04 | |||
| 50000 | $ 0.04 | |||
| 70000 | $ 0.04 | |||
| 100000 | $ 0.04 | |||
| 250000 | $ 0.04 | |||
Description
General part information
PBSS4160 Series
NPN/PNP low VCEsatBreakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.
Documents
Technical documentation and resources