Discrete Semiconductor Products

MJD45H11TM

Obsolete

ON Semiconductor

8 A, 80 V PNP POWER BIPOLAR JUNCTION TRANSISTOR

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet Package Drawing-369AK-DPAK3

Discrete Semiconductor Products

MJD45H11TM

Obsolete

ON Semiconductor

8 A, 80 V PNP POWER BIPOLAR JUNCTION TRANSISTOR

Deep-Dive with AI

DocumentsDatasheet Package Drawing-369AK-DPAK3

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	MJD45H11TM

Current - Collector (Ic) (Max) [Max]	8 A
Current - Collector Cutoff (Max) [Max]	10 µA
DC Current Gain (hFE) (Min) @ Ic, Vce	40 hFE
Frequency - Transition	40 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power - Max [Max]	1.75 W
Supplier Device Package	DPAK
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	1 V
Voltage - Collector Emitter Breakdown (Max) [Max]	80 V

MJD45H11(LEGACY%20FAIRCHILD) Series

8 A, 80 V PNP Power Bipolar Junction Transistor

Part	Package / Case	Mounting Type	Current - Collector Cutoff (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Frequency - Transition	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Transistor Type	Operating Temperature	Grade	Qualification
ON Semiconductor MJD45H11G	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	1 µA	-55 °C	150 °C	DPAK	90 MHz	1.75 W	1 V	40 hFE	8 A	80 V	PNP
ON Semiconductor MJD45H11RLG	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	1 µA	-55 °C	150 °C	DPAK	90 MHz	1.75 W	1 V	40 hFE	8 A	80 V	PNP
ON Semiconductor MJD45H11-001	IPAK TO-251-3 Short Leads TO-251AA	Through Hole	1 µA	-55 °C	150 °C	IPAK	90 MHz	1.75 W	1 V	40 hFE	8 A	80 V	PNP
ON Semiconductor MJD45H11TM	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	10 µA			DPAK	40 MHz	1.75 W	1 V	40 hFE	8 A	80 V	PNP	150 °C
ON Semiconductor NJVMJD45H11T4G-VF01	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	1 µA	-55 °C	150 °C	DPAK	90 MHz	1.75 W	1 V	40 hFE	8 A	80 V	PNP
ON Semiconductor NJVMJD45H11G	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	1 µA	-55 °C	150 °C	DPAK	90 MHz	1.75 W	1 V	40 hFE	8 A	80 V	PNP		Automotive	AEC-Q101

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

MJD45H11(LEGACY%20FAIRCHILD) Series

The Power Bipolar Junction Transistor is designed for general purpose power and switching output or driver stages in applications such as switching regulators, converters and power amplifiers.