Discrete Semiconductor Products

NJVMJD45H11T4G-VF01

Obsolete

ON Semiconductor

TRANS PNP 80V 8A DPAK

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Discrete Semiconductor Products

NJVMJD45H11T4G-VF01

Obsolete

ON Semiconductor

TRANS PNP 80V 8A DPAK

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	NJVMJD45H11T4G-VF01

Current - Collector (Ic) (Max) [Max]	8 A
Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce	40 hFE
Frequency - Transition	90 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power - Max [Max]	1.75 W
Supplier Device Package	DPAK
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	1 V
Voltage - Collector Emitter Breakdown (Max) [Max]	80 V

MJD45H11(LEGACY%20FAIRCHILD) Series

8 A, 80 V PNP Power Bipolar Junction Transistor

Part	Package / Case	Mounting Type	Current - Collector Cutoff (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Frequency - Transition	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Transistor Type	Operating Temperature	Grade	Qualification
ON Semiconductor MJD45H11G	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	1 µA	-55 °C	150 °C	DPAK	90 MHz	1.75 W	1 V	40 hFE	8 A	80 V	PNP
ON Semiconductor MJD45H11RLG	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	1 µA	-55 °C	150 °C	DPAK	90 MHz	1.75 W	1 V	40 hFE	8 A	80 V	PNP
ON Semiconductor MJD45H11-001	IPAK TO-251-3 Short Leads TO-251AA	Through Hole	1 µA	-55 °C	150 °C	IPAK	90 MHz	1.75 W	1 V	40 hFE	8 A	80 V	PNP
ON Semiconductor MJD45H11TM	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	10 µA			DPAK	40 MHz	1.75 W	1 V	40 hFE	8 A	80 V	PNP	150 °C
ON Semiconductor NJVMJD45H11T4G-VF01	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	1 µA	-55 °C	150 °C	DPAK	90 MHz	1.75 W	1 V	40 hFE	8 A	80 V	PNP
ON Semiconductor NJVMJD45H11G	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	1 µA	-55 °C	150 °C	DPAK	90 MHz	1.75 W	1 V	40 hFE	8 A	80 V	PNP		Automotive	AEC-Q101

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

MJD45H11(LEGACY%20FAIRCHILD) Series

The Power Bipolar Junction Transistor is designed for general purpose power and switching output or driver stages in applications such as switching regulators, converters and power amplifiers.

Documents

Technical documentation and resources