MJD45H11(LEGACY%20FAIRCHILD) Series

8 A, 80 V PNP Power Bipolar Junction Transistor

Catalog

8 A, 80 V PNP Power Bipolar Junction Transistor

Part	Package / Case	Mounting Type	Current - Collector Cutoff (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Frequency - Transition	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Transistor Type	Operating Temperature	Grade	Qualification
ON Semiconductor MJD45H11G	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	1 µA	-55 °C	150 °C	DPAK	90 MHz	1.75 W	1 V	40 hFE	8 A	80 V	PNP
ON Semiconductor MJD45H11RLG	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	1 µA	-55 °C	150 °C	DPAK	90 MHz	1.75 W	1 V	40 hFE	8 A	80 V	PNP
ON Semiconductor MJD45H11-001	IPAK TO-251-3 Short Leads TO-251AA	Through Hole	1 µA	-55 °C	150 °C	IPAK	90 MHz	1.75 W	1 V	40 hFE	8 A	80 V	PNP
ON Semiconductor MJD45H11TM	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	10 µA			DPAK	40 MHz	1.75 W	1 V	40 hFE	8 A	80 V	PNP	150 °C
ON Semiconductor NJVMJD45H11T4G-VF01	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	1 µA	-55 °C	150 °C	DPAK	90 MHz	1.75 W	1 V	40 hFE	8 A	80 V	PNP
ON Semiconductor NJVMJD45H11G	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	1 µA	-55 °C	150 °C	DPAK	90 MHz	1.75 W	1 V	40 hFE	8 A	80 V	PNP		Automotive	AEC-Q101

Catalog

8 A, 80 V PNP Power Bipolar Junction Transistor

Key Features

• Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix)

• Straight Lead Version in Plastic Sleeves ("-1" Suffix)

• Lead Formed Version in 16 mm Tape and Reel for Surface Mount ("T4" Suffix)

• Electrically Similar to Popular D44H/D45H Series

• Low Collector Emitter Saturation Voltage VCE(sat)= 1.0 Volt Max @ 8.0 Amperes

• Fast Switching Speeds

• Complementary Pairs Simplifies Designs

• NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

• These Devices are Pb-Free and are RoHS Compliant

Description

The Power Bipolar Junction Transistor is designed for general purpose power and switching output or driver stages in applications such as switching regulators, converters and power amplifiers.