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ONSEMI MJD31T4G
Discrete Semiconductor Products

MJD45H11RLG

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ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, GENERAL PURPOSE, PNP, 80 V, 8 A, 20 W, TO-252 (DPAK)

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ONSEMI MJD31T4G
Discrete Semiconductor Products

MJD45H11RLG

Active
ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, GENERAL PURPOSE, PNP, 80 V, 8 A, 20 W, TO-252 (DPAK)

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Technical Specifications

Parameters and characteristics for this part

SpecificationMJD45H11RLG
Current - Collector (Ic) (Max) [Max]8 A
Current - Collector Cutoff (Max) [Max]1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce40 hFE
Frequency - Transition90 MHz
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power - Max [Max]1.75 W
Supplier Device PackageDPAK
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic1 V
Voltage - Collector Emitter Breakdown (Max) [Max]80 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.60
10$ 1.01
100$ 0.68
500$ 0.53
Digi-Reel® 1$ 1.60
10$ 1.01
100$ 0.68
500$ 0.53
Tape & Reel (TR) 1800$ 0.45
3600$ 0.42
5400$ 0.40
9000$ 0.38
NewarkEach (Supplied on Cut Tape) 1000$ 0.51
ON SemiconductorN/A 1$ 0.39

Description

General part information

MJD45H11(LEGACY%20FAIRCHILD) Series

The Power Bipolar Junction Transistor is designed for general purpose power and switching output or driver stages in applications such as switching regulators, converters and power amplifiers.