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DPAK_369C
Discrete Semiconductor Products

NJVMJD45H11G

Active
ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, PNP, 80 V, 8 A, 20 W, TO-252 (DPAK), SURFACE MOUNT

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DPAK_369C
Discrete Semiconductor Products

NJVMJD45H11G

Active
ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, PNP, 80 V, 8 A, 20 W, TO-252 (DPAK), SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

SpecificationNJVMJD45H11G
Current - Collector (Ic) (Max) [Max]8 A
Current - Collector Cutoff (Max) [Max]1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce40 hFE
Frequency - Transition90 MHz
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power - Max [Max]1.75 W
QualificationAEC-Q101
Supplier Device PackageDPAK
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic1 V
Voltage - Collector Emitter Breakdown (Max) [Max]80 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 1.37
10$ 0.86
100$ 0.57
500$ 0.45
1000$ 0.41
2000$ 0.37
5000$ 0.34
10000$ 0.31
NewarkEach 500$ 0.47
1000$ 0.41
2500$ 0.33
10000$ 0.32
ON SemiconductorN/A 1$ 0.33

Description

General part information

MJD45H11(LEGACY%20FAIRCHILD) Series

The Power Bipolar Junction Transistor is designed for general purpose power and switching output or driver stages in applications such as switching regulators, converters and power amplifiers.