Discrete Semiconductor Products

STP24N60DM2

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STMicroelectronics

N-CHANNEL 600 V, 0.175 OHM TYP., 18 A MDMESH DM2 POWER MOSFET IN TO-220 PACKAGE

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DocumentsDatasheet Product Change Notice EN

Discrete Semiconductor Products

STP24N60DM2

Active

STMicroelectronics

N-CHANNEL 600 V, 0.175 OHM TYP., 18 A MDMESH DM2 POWER MOSFET IN TO-220 PACKAGE

Deep-Dive with AI

DocumentsDatasheet Product Change Notice EN

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STP24N60DM2

Current - Continuous Drain (Id) @ 25°C	18 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	29 nC
Input Capacitance (Ciss) (Max) @ Vds	1055 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	150 W
Rds On (Max) @ Id, Vgs	200 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	5 V

STP24 Series

N-Channel 100V - 0.055Ohm - 26A - TO-220 LOOhm GATE CHARGE StripFET(TM) II POWER MOSFET

Part	Package / Case	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Mounting Type	FET Type	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds
STMicroelectronics STP24NF10	TO-220-3	MOSFET (Metal Oxide)	870 pF	26 A	TO-220	175 °C	-55 °C	10 V	4 V	60 mOhm	Through Hole	N-Channel	41 nC	100 V	85 W	20 V
STMicroelectronics STP24N60DM2	TO-220-3	MOSFET (Metal Oxide)		18 A	TO-220	150 °C	-55 °C	10 V	5 V	200 mOhm	Through Hole	N-Channel		600 V	150 W	25 V	29 nC	1055 pF
STMicroelectronics STP24N60M6	TO-220-3	MOSFET (Metal Oxide)		17 A	TO-220	150 °C	-55 °C	10 V	4.75 V	190 mOhm	Through Hole	N-Channel	23 nC	600 V	130 W	25 V		960 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	1009	$ 3.87
	Tube	1	$ 3.40
		50	$ 2.69
		100	$ 2.31
		500	$ 2.05
		1000	$ 1.76
		2000	$ 1.65
		5000	$ 1.59
Newark	Each	1	$ 4.35
		10	$ 3.86
		25	$ 3.00
		50	$ 2.96
		100	$ 2.92
		250	$ 2.81
		500	$ 2.69

Description

General part information

STP24 Series

These FDmesh II Plus™ low QgPower MOSFETs with intrinsic fast-recovery body diode are produced using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.