STP24NF10
ActiveN-CHANNEL 100V - 0.055OHM - 26A - TO-220 LOOHM GATE CHARGE STRIPFET(TM) II POWER MOSFET
STP24NF10
ActiveN-CHANNEL 100V - 0.055OHM - 26A - TO-220 LOOHM GATE CHARGE STRIPFET(TM) II POWER MOSFET
Technical Specifications
Parameters and characteristics for this part
| Specification | STP24NF10 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 26 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 870 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 85 W |
| Rds On (Max) @ Id, Vgs | 60 mOhm |
| Supplier Device Package | TO-220 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STP24 Series
These FDmesh II Plus™ low QgPower MOSFETs with intrinsic fast-recovery body diode are produced using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
Documents
Technical documentation and resources
