STP24N60M6
ActiveN-CHANNEL 600 V, 162 MOHM TYP., 17 A MDMESH M6 POWER MOSFET IN A TO-220 PACKAGE
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STP24N60M6
ActiveN-CHANNEL 600 V, 162 MOHM TYP., 17 A MDMESH M6 POWER MOSFET IN A TO-220 PACKAGE
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Technical Specifications
Parameters and characteristics for this part
| Specification | STP24N60M6 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 17 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 960 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 130 W |
| Rds On (Max) @ Id, Vgs | 190 mOhm |
| Supplier Device Package | TO-220 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 4.75 V |
STP24 Series
N-Channel 100V - 0.055Ohm - 26A - TO-220 LOOhm GATE CHARGE StripFET(TM) II POWER MOSFET
| Part | Package / Case | Technology | Input Capacitance (Ciss) (Max) @ Vds [Max] | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Operating Temperature [Max] | Operating Temperature [Min] | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Mounting Type | FET Type | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 STMicroelectronics | TO-220-3 | MOSFET (Metal Oxide) | 870 pF | 26 A | TO-220 | 175 °C | -55 °C | 10 V | 4 V | 60 mOhm | Through Hole | N-Channel | 41 nC | 100 V | 85 W | 20 V | ||
STMicroelectronics | TO-220-3 | MOSFET (Metal Oxide) | 18 A | TO-220 | 150 °C | -55 °C | 10 V | 5 V | 200 mOhm | Through Hole | N-Channel | 600 V | 150 W | 25 V | 29 nC | 1055 pF | ||
STMicroelectronics | TO-220-3 | MOSFET (Metal Oxide) | 17 A | TO-220 | 150 °C | -55 °C | 10 V | 4.75 V | 190 mOhm | Through Hole | N-Channel | 23 nC | 600 V | 130 W | 25 V | 960 pF |
Pricing
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Description
General part information
STP24 Series
These FDmesh II Plus™ low QgPower MOSFETs with intrinsic fast-recovery body diode are produced using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
Documents
Technical documentation and resources