STP24 Series

N-Channel 100V - 0.055Ohm - 26A - TO-220 LOOhm GATE CHARGE StripFET(TM) II POWER MOSFET

Catalog

N-Channel 100V - 0.055Ohm - 26A - TO-220 LOOhm GATE CHARGE StripFET(TM) II POWER MOSFET

Part	Package / Case	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Mounting Type	FET Type	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds
STMicroelectronics STP24NF10	TO-220-3	MOSFET (Metal Oxide)	870 pF	26 A	TO-220	175 °C	-55 °C	10 V	4 V	60 mOhm	Through Hole	N-Channel	41 nC	100 V	85 W	20 V
STMicroelectronics STP24N60DM2	TO-220-3	MOSFET (Metal Oxide)		18 A	TO-220	150 °C	-55 °C	10 V	5 V	200 mOhm	Through Hole	N-Channel		600 V	150 W	25 V	29 nC	1055 pF
STMicroelectronics STP24N60M6	TO-220-3	MOSFET (Metal Oxide)		17 A	TO-220	150 °C	-55 °C	10 V	4.75 V	190 mOhm	Through Hole	N-Channel	23 nC	600 V	130 W	25 V		960 pF

Catalog

N-Channel 100V - 0.055Ohm - 26A - TO-220 LOOhm GATE CHARGE StripFET(TM) II POWER MOSFET

Description

These FDmesh II Plus™ low QgPower MOSFETs with intrinsic fast-recovery body diode are produced using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.