Discrete Semiconductor Products

STF10NM60N

Active

STMicroelectronics

POWER MOSFET, N CHANNEL, 600 V, 10 A, 550 MILLIOHMS, TO-220FP, 3 PINS, THROUGH HOLE

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet +16

Discrete Semiconductor Products

STF10NM60N

Active

STMicroelectronics

POWER MOSFET, N CHANNEL, 600 V, 10 A, 550 MILLIOHMS, TO-220FP, 3 PINS, THROUGH HOLE

Deep-Dive with AI

DocumentsDatasheet +16

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STF10NM60N

Current - Continuous Drain (Id) @ 25°C	10 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	19 nC
Input Capacitance (Ciss) (Max) @ Vds	540 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	25 W
Supplier Device Package	TO-220FP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

STF10N105K5 Series

N-channel 650 V, 0.75 Ohm typ., 10 A Zener-protected SuperMESH3(TM) Power MOSFET in TO-220FP package

Part	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Vgs (Max) [Max]	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Supplier Device Package	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Vgs (Max)	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]
STMicroelectronics STF10N105K5	545 pF	5 V	6 A	30 V	N-Channel	10 V	Through Hole	TO-220FP	TO-220-3 Full Pack	21.5 nC	-55 °C	150 °C	MOSFET (Metal Oxide)
STMicroelectronics STF10NM60ND	540 pF	4 V	8 A		N-Channel	10 V	Through Hole	TO-220FP	TO-220-3 Full Pack	19 nC	-55 °C	150 °C	MOSFET (Metal Oxide)	25 V	600 V	25 W
STMicroelectronics STF10N60M2		4 V	7.5 A		N-Channel	10 V	Through Hole	TO-220FP	TO-220-3 Full Pack	13.5 nC	-55 °C	150 °C	MOSFET (Metal Oxide)	25 V	600 V	25 W	600 mOhm	400 pF
STMicroelectronics STF10N65K3		4.5 V	10 A		N-Channel	10 V	Through Hole	TO-220FP	TO-220-3 Full Pack	42 nC	-55 °C	150 °C	MOSFET (Metal Oxide)	30 V	650 V		1 Ohm		35 W
STMicroelectronics STF10N60DM2		5 V	8 A		N-Channel	10 V	Through Hole	TO-220FP	TO-220-3 Full Pack		-55 °C	150 °C	MOSFET (Metal Oxide)	25 V	600 V	25 W				530 mOhm
STMicroelectronics STF10NM60N	540 pF	4 V	10 A		N-Channel	10 V	Through Hole	TO-220FP	TO-220-3 Full Pack	19 nC	-55 °C	150 °C	MOSFET (Metal Oxide)	25 V	600 V	25 W
STMicroelectronics STF10N95K5	630 pF	5 V	8 A		N-Channel	10 V	Through Hole	TO-220FP	TO-220-3 Full Pack		-55 °C	150 °C	MOSFET (Metal Oxide)	30 V	950 V		800 mOhm				22 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 2.15
		50	$ 1.71
		100	$ 1.46
		500	$ 1.43

Description

General part information

STF10N105K5 Series

These N-channel Zener-protected Power MOSFETs are designed using ST’s revolutionary avalanche-rugged very high voltage SuperMESH™ 5 technology, based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance, and ultra-low gate charge for applications which require superior power density and high efficiency.

STF10NM60N

Deep-Dive with AI

STF10NM60N

Deep-Dive with AI

Technical Specifications

STF10N105K5 Series

Pricing

Description

STF10N105K5 Series

Documents

Datasheet

Flyers (5 of 7)

AN2344

Flyers (5 of 7)

AN2842

TN1156

Flyers (5 of 7)

TN1378

Flyers (5 of 7)

TN1224

Flyers (5 of 7)

DS14498

Flyers (5 of 7)

UM1575

Flyers (5 of 7)

AN4337

TN1225

AN4250

STF10N105K5 Series