STF10N65K3
ActiveN-CHANNEL 650 V, 0.75 OHM TYP., 10 A ZENER-PROTECTED SUPERMESH3(TM) POWER MOSFET IN TO-220FP PACKAGE
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STF10N65K3
ActiveN-CHANNEL 650 V, 0.75 OHM TYP., 10 A ZENER-PROTECTED SUPERMESH3(TM) POWER MOSFET IN TO-220FP PACKAGE
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Technical Specifications
Parameters and characteristics for this part
| Specification | STF10N65K3 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 10 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 Full Pack |
| Power Dissipation (Max) [Max] | 35 W |
| Rds On (Max) @ Id, Vgs | 1 Ohm |
| Supplier Device Package | TO-220FP |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 4.5 V |
STF10N105K5 Series
N-channel 650 V, 0.75 Ohm typ., 10 A Zener-protected SuperMESH3(TM) Power MOSFET in TO-220FP package
| Part | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) [Max] | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Supplier Device Package | Package / Case | Gate Charge (Qg) (Max) @ Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Technology | Vgs (Max) | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds [Max] | Power Dissipation (Max) [Max] | Rds On (Max) @ Id, Vgs [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 STMicroelectronics | 545 pF | 5 V | 6 A | 30 V | N-Channel | 10 V | Through Hole | TO-220FP | TO-220-3 Full Pack | 21.5 nC | -55 °C | 150 °C | MOSFET (Metal Oxide) | ||||||||
STMicroelectronics | 540 pF | 4 V | 8 A | N-Channel | 10 V | Through Hole | TO-220FP | TO-220-3 Full Pack | 19 nC | -55 °C | 150 °C | MOSFET (Metal Oxide) | 25 V | 600 V | 25 W | ||||||
STMicroelectronics | 4 V | 7.5 A | N-Channel | 10 V | Through Hole | TO-220FP | TO-220-3 Full Pack | 13.5 nC | -55 °C | 150 °C | MOSFET (Metal Oxide) | 25 V | 600 V | 25 W | 600 mOhm | 400 pF | |||||
STMicroelectronics | 4.5 V | 10 A | N-Channel | 10 V | Through Hole | TO-220FP | TO-220-3 Full Pack | 42 nC | -55 °C | 150 °C | MOSFET (Metal Oxide) | 30 V | 650 V | 1 Ohm | 35 W | ||||||
STMicroelectronics | 5 V | 8 A | N-Channel | 10 V | Through Hole | TO-220FP | TO-220-3 Full Pack | -55 °C | 150 °C | MOSFET (Metal Oxide) | 25 V | 600 V | 25 W | 530 mOhm | |||||||
STMicroelectronics | 540 pF | 4 V | 10 A | N-Channel | 10 V | Through Hole | TO-220FP | TO-220-3 Full Pack | 19 nC | -55 °C | 150 °C | MOSFET (Metal Oxide) | 25 V | 600 V | 25 W | ||||||
 STMicroelectronics | 630 pF | 5 V | 8 A | N-Channel | 10 V | Through Hole | TO-220FP | TO-220-3 Full Pack | -55 °C | 150 °C | MOSFET (Metal Oxide) | 30 V | 950 V | 800 mOhm | 22 nC |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STF10N105K5 Series
These N-channel Zener-protected Power MOSFETs are designed using ST’s revolutionary avalanche-rugged very high voltage SuperMESH™ 5 technology, based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance, and ultra-low gate charge for applications which require superior power density and high efficiency.
Documents
Technical documentation and resources