Discrete Semiconductor Products

STF10N62K3

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STMicroelectronics

N-CHANNEL 620 V, 0.68 OHM TYP., 8.4 A SUPERMESH3(TM) POWER MOSFET IN TO-220FP PACKAGE

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Discrete Semiconductor Products

STF10N62K3

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STMicroelectronics

N-CHANNEL 620 V, 0.68 OHM TYP., 8.4 A SUPERMESH3(TM) POWER MOSFET IN TO-220FP PACKAGE

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Technical Specifications

Parameters and characteristics for this part

Specification	STF10N62K3

Current - Continuous Drain (Id) @ 25°C	8.4 A
Drain to Source Voltage (Vdss)	620 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	42 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1250 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Rds On (Max) @ Id, Vgs	750 mOhm
Supplier Device Package	TO-220FP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

STF10 Series

N-channel 650 V, 0.75 Ohm typ., 10 A Zener-protected SuperMESH3(TM) Power MOSFET in TO-220FP package

Part	Vgs (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Technology	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs	Package / Case	FET Type	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs
STMicroelectronics STF10N105K5	30 V	150 °C	-55 °C	Through Hole	MOSFET (Metal Oxide)	5 V	545 pF	21.5 nC	TO-220-3 Full Pack	N-Channel	TO-220FP	10 V	1050 V	6 A
STMicroelectronics STF10NM60ND		150 °C	-55 °C	Through Hole	MOSFET (Metal Oxide)	4 V		19 nC	TO-220-3 Full Pack	N-Channel	TO-220FP	10 V	600 V	8 A	540 pF	25 V	25 W
STMicroelectronics STF10N62K3		150 °C	-55 °C	Through Hole	MOSFET (Metal Oxide)	4.5 V	1250 pF		TO-220-3 Full Pack	N-Channel	TO-220FP	10 V	620 V	8.4 A		30 V		42 nC	750 mOhm
STMicroelectronics STF10N60M2		150 °C	-55 °C	Through Hole	MOSFET (Metal Oxide)	4 V	400 pF		TO-220-3 Full Pack	N-Channel	TO-220FP	10 V	600 V	7.5 A		25 V	25 W	13.5 nC	600 mOhm
STMicroelectronics STF10N65K3		150 °C	-55 °C	Through Hole	MOSFET (Metal Oxide)	4.5 V			TO-220-3 Full Pack	N-Channel	TO-220FP	10 V	650 V	10 A		30 V	35 W	42 nC	1 Ohm
STMicroelectronics STF10N60DM2		150 °C	-55 °C	Through Hole	MOSFET (Metal Oxide)	5 V		15 nC	TO-220-3 Full Pack	N-Channel	TO-220FP	10 V	600 V	8 A	529 pF	25 V	25 W		530 mOhm
STMicroelectronics STF10NM60N		150 °C	-55 °C	Through Hole	MOSFET (Metal Oxide)	4 V		19 nC	TO-220-3 Full Pack	N-Channel	TO-220FP	10 V	600 V	10 A	540 pF	25 V	25 W
STMicroelectronics STF10N95K5		150 °C	-55 °C	Through Hole	MOSFET (Metal Oxide)	5 V	630 pF		TO-220-3 Full Pack	N-Channel	TO-220FP	10 V	950 V	8 A		30 V		22 nC	800 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.95
	Tube	1000	$ 1.12

Description

General part information

STF10 Series

These N-channel Zener-protected Power MOSFETs are designed using ST’s revolutionary avalanche-rugged very high voltage SuperMESH™ 5 technology, based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance, and ultra-low gate charge for applications which require superior power density and high efficiency.

STF10N62K3

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STF10N62K3

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Technical Specifications

STF10 Series

Pricing

Description

STF10 Series

Documents

Datasheet

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STF10 Series