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STMICROELECTRONICS STF13N60DM2
Discrete Semiconductor Products

STF10N105K5

Active
STMicroelectronics

N-CHANNEL 1050 V, 1 OHM TYP., 6 A MDMESH K5 POWER MOSFETS IN TO-220FP PACKAGE

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Search across all available documentation for this part.

DocumentsTN1156+14
STMICROELECTRONICS STF13N60DM2
Discrete Semiconductor Products

STF10N105K5

Active
STMicroelectronics

N-CHANNEL 1050 V, 1 OHM TYP., 6 A MDMESH K5 POWER MOSFETS IN TO-220FP PACKAGE

Deep-Dive with AI

DocumentsTN1156+14

Technical Specifications

Parameters and characteristics for this part

SpecificationSTF10N105K5
Current - Continuous Drain (Id) @ 25°C6 A
Drain to Source Voltage (Vdss)1050 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs21.5 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]545 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3 Full Pack
Supplier Device PackageTO-220FP
TechnologyMOSFET (Metal Oxide)
Vgs (Max) [Max]30 V
Vgs(th) (Max) @ Id5 V

STF10 Series

N-channel 650 V, 0.75 Ohm typ., 10 A Zener-protected SuperMESH3(TM) Power MOSFET in TO-220FP package

PartVgs (Max) [Max]Operating Temperature [Max]Operating Temperature [Min]Mounting TypeTechnologyVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ Vds [Max]Gate Charge (Qg) (Max) @ VgsPackage / CaseFET TypeSupplier Device PackageDrive Voltage (Max Rds On, Min Rds On)Drain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CInput Capacitance (Ciss) (Max) @ VdsVgs (Max)Power Dissipation (Max)Gate Charge (Qg) (Max) @ Vgs [Max]Rds On (Max) @ Id, Vgs
STMICROELECTRONICS STF13N60DM2
STMicroelectronics
STF10N105K5
30 V
150 °C
-55 °C
Through Hole
MOSFET (Metal Oxide)
5 V
545 pF
21.5 nC
TO-220-3 Full Pack
N-Channel
TO-220FP
10 V
1050 V
6 A
TO-220-F
STMicroelectronics
STF10NM60ND
150 °C
-55 °C
Through Hole
MOSFET (Metal Oxide)
4 V
19 nC
TO-220-3 Full Pack
N-Channel
TO-220FP
10 V
600 V
8 A
540 pF
25 V
25 W
TO-220-F
STMicroelectronics
STF10N62K3
150 °C
-55 °C
Through Hole
MOSFET (Metal Oxide)
4.5 V
1250 pF
TO-220-3 Full Pack
N-Channel
TO-220FP
10 V
620 V
8.4 A
30 V
42 nC
750 mOhm
TO-220-F
STMicroelectronics
STF10N60M2
150 °C
-55 °C
Through Hole
MOSFET (Metal Oxide)
4 V
400 pF
TO-220-3 Full Pack
N-Channel
TO-220FP
10 V
600 V
7.5 A
25 V
25 W
13.5 nC
600 mOhm
STMicroelectronics-STF30N65M5 MOSFETs Trans MOSFET N-CH Si 650V 22A 3-Pin(3+Tab) TO-220FP Tube
STMicroelectronics
STF10N65K3
150 °C
-55 °C
Through Hole
MOSFET (Metal Oxide)
4.5 V
TO-220-3 Full Pack
N-Channel
TO-220FP
10 V
650 V
10 A
30 V
35 W
42 nC
1 Ohm
TO-220-F
STMicroelectronics
STF10N60DM2
150 °C
-55 °C
Through Hole
MOSFET (Metal Oxide)
5 V
15 nC
TO-220-3 Full Pack
N-Channel
TO-220FP
10 V
600 V
8 A
529 pF
25 V
25 W
530 mOhm
TO-220-F
STMicroelectronics
STF10NM60N
150 °C
-55 °C
Through Hole
MOSFET (Metal Oxide)
4 V
19 nC
TO-220-3 Full Pack
N-Channel
TO-220FP
10 V
600 V
10 A
540 pF
25 V
25 W
INFINEON SPA11N80C3XKSA2
STMicroelectronics
STF10N95K5
150 °C
-55 °C
Through Hole
MOSFET (Metal Oxide)
5 V
630 pF
TO-220-3 Full Pack
N-Channel
TO-220FP
10 V
950 V
8 A
30 V
22 nC
800 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 20$ 3.74
Tube 1$ 3.34
50$ 2.65
100$ 2.27
500$ 2.02
1000$ 1.73
2000$ 1.63
5000$ 1.56
NewarkEach 1$ 4.45
10$ 3.54
25$ 2.62
50$ 2.55
100$ 2.48
250$ 2.30
500$ 2.11

Description

General part information

STF10 Series

These N-channel Zener-protected Power MOSFETs are designed using ST’s revolutionary avalanche-rugged very high voltage SuperMESH™ 5 technology, based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance, and ultra-low gate charge for applications which require superior power density and high efficiency.