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EPC202xENG

Discrete Semiconductor Products

EPC2021ENGR

Obsolete

TRANS GAN 80V 60A BUMPED DIE

EPC202xENG

Discrete Semiconductor Products

EPC2021ENGR

Obsolete

TRANS GAN 80V 60A BUMPED DIE

Specifications Series Pricing CAD Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	EPC2021ENGR

Current - Continuous Drain (Id) (Ta)	60 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	5 V
FET Type	N-Channel
Gate Charge (Max)	15 nC
Input Capacitance (Ciss) (Max)	1700 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-40 °C
Package / Case	Die
Package Name	Die
Rds On (Max)	2.5 mOhm
Technology	GaNFET (Gallium Nitride)
Vgs (Max) Positive	6 V
Vgs(th) (Max)	2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

CAD

3D models and CAD resources for this part

Description

General part information

EPC20 Series

N-Channel 80 V 60A (Ta) Surface Mount Die

Documents

Technical documentation and resources

Datasheet

EPC20 Series

Part	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max) Negative	Vgs (Max) Positive	Vgs(th) (Max)	Input Capacitance (Ciss) (Max)	Gate Charge (Max)	Package / Case	Rds On (Max)	Drain to Source Voltage (Vdss)	Operating Temperature (Min)	Operating Temperature (Max)	Package Name	Current - Continuous Drain (Id) (Ta)	Mounting Type	Technology	FET Type
EPC EPC2015	5 V	-5 V	6 V	2.5 V	1200 pF	11.6 nC	Die	4 mOhm	40 V	-40 °C	150 °C	Die	33 A	Surface Mount	GaNFET (Gallium Nitride)	N-Channel
EPC EPC2055	5 V		6 V	2.5 V	1111 pF 1254 pF	8.5 nC	Die	3.6 mOhm 4.2 mOhm	40 V	-40 °C	150 °C	Die	29 A	Surface Mount	GaNFET (Gallium Nitride)	N-Channel
EPC EPC2007	5 V	-5 V	6 V	2.5 V	205 pF	2.8 nC 2.8 nC	Die	30 mOhm	100 V	-40 °C	125 °C	Die	6 A	Surface Mount	GaNFET (Gallium Nitride)	N-Channel
EPC EPC2014C	5 V		6 V	2.5 V		2.5 nC	Die	16 mOhm	40 V	-40 °C	150 °C	Die	10 A	Surface Mount	GaNFET (Gallium Nitride)	N-Channel
EPC EPC2051	5 V		6 V	2.5 V	258 pF	2.1 nC	Die	25 mOhm	100 V	-40 °C	150 °C	Die	1.7 A	Surface Mount	GaNFET (Gallium Nitride)	N-Channel
EPC EPC2029	5 V		6 V	2.5 V	1410 pF	13 nC	Die	3.2 mOhm	80 V	-40 °C	150 °C	Die	48 A	Surface Mount	GaNFET (Gallium Nitride)	N-Channel
EPC EPC2018	5 V	-5 V	6 V	2.5 V	540 pF	7.5 nC	Die	25 mOhm	150 V	-40 °C	125 °C	Die	12 A	Surface Mount	GaNFET (Gallium Nitride)	N-Channel
EPC EPC2044	5 V		6 V	2.5 V	664 pF	5.5 nC	Die	10.5 mOhm	100 V	-40 °C	150 °C	Die	9.4 A	Surface Mount	GaNFET (Gallium Nitride)	N-Channel
EPC EPC2016	5 V	-5 V	6 V	2.5 V	520 pF	5.2 nC	Die	16 mOhm 16 mOhm	100 V	-40 °C	125 °C	Die	11 A	Surface Mount	GaNFET (Gallium Nitride)	N-Channel
EPC EPC2021ENGR	5 V		6 V	2.5 V	1700 pF	15 nC	Die	2.5 mOhm	80 V	-40 °C	150 °C	Die	60 A	Surface Mount	GaNFET (Gallium Nitride)	N-Channel