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EPC2029
Discrete Semiconductor Products

EPC2029

Active
EPC

GANFET N-CH 80V 48A DIE

EPC2029
Discrete Semiconductor Products

EPC2029

Active
EPC

GANFET N-CH 80V 48A DIE

Technical Specifications

Parameters and characteristics for this part

SpecificationEPC2029
Current - Continuous Drain (Id) (Ta)48 A
Drain to Source Voltage (Vdss)80 V
Drive Voltage (Max Rds On, Min Rds On)5 V
FET TypeN-Channel
Gate Charge (Max)13 nC
Input Capacitance (Ciss) (Max)1410 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-40 °C
Package / CaseDie
Package NameDie
Rds On (Max)3.2 mOhm
TechnologyGaNFET (Gallium Nitride)
Vgs (Max) Positive6 V
Vgs(th) (Max)2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyCut Tape (CT) 1$ 10.59<4d
10$ 7.28
100$ 5.55
Tape & Reel (TR) 500$ 4.62<4d
1000$ 4.54

CAD

3D models and CAD resources for this part

Description

General part information

EPC20 Series

N-Channel 80 V 48A (Ta) Surface Mount Die

Documents

Technical documentation and resources