Discrete Semiconductor Products

EPC2016

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EPC

GANFET N-CH 100V 11A DIE

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Discrete Semiconductor Products

EPC2016

Unknown

EPC

GANFET N-CH 100V 11A DIE

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	EPC2016

Current - Continuous Drain (Id) @ 25°C	11 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	5.2 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	520 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	125 °C
Operating Temperature [Min]	-40 C
Package / Case	Die
Rds On (Max) @ Id, Vgs	16 mOhm
Supplier Device Package	Die
Technology	GaNFET (Gallium Nitride)
Vgs (Max) [Max]	6 V
Vgs (Max) [Min]	-5 V
Vgs(th) (Max) @ Id	2.5 V

EPC20 Series

Part	FET Type	Technology	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Vgs (Max) [Min]	Vgs (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs [Max]
EPC EPC2015	N-Channel	GaNFET (Gallium Nitride)	Surface Mount	33 A	Die	-40 °C	150 °C	40 V	4 mOhm	Die	11.6 nC	1200 pF	2.5 V	-5 V	6 V	5 V
EPC EPC2055	N-Channel	GaNFET (Gallium Nitride)	Surface Mount	29 A	Die	-40 °C	150 °C	40 V	3.6 mOhm 4.2 mOhm	Die	8.5 nC	1111 pF 1254 pF	2.5 V	-4 V	6 V	5 V
EPC EPC2007	N-Channel	GaNFET (Gallium Nitride)	Surface Mount	6 A	Die	-40 C	125 °C	100 V		Die	2.8 nC	205 pF	2.5 V	-5 V	6 V	5 V
EPC EPC2014C	N-Channel	GaNFET (Gallium Nitride)	Surface Mount	10 A	Die	-40 °C	150 °C	40 V	16 mOhm	Die		300 pF	2.5 V	-4 V	6 V	5 V	2.5 nC
EPC EPC2051	N-Channel	GaNFET (Gallium Nitride)	Surface Mount	1.7 A	Die	-40 °C	150 °C	100 V	25 mOhm	Die	2.1 nC		2.5 V	-4 V	6 V	5 V		258 pF
EPC EPC2029	N-Channel	GaNFET (Gallium Nitride)	Surface Mount	48 A	Die	-40 °C	150 °C	80 V	3.2 mOhm	Die	13 nC		2.5 V	-4 V	6 V	5 V		1410 pF
EPC EPC2018	N-Channel	GaNFET (Gallium Nitride)	Surface Mount	12 A	Die	-40 C	125 °C	150 V	25 mOhm	Die	7.5 nC		2.5 V	-5 V	6 V	5 V		540 pF
EPC EPC2044	N-Channel	GaNFET (Gallium Nitride)	Surface Mount	9.4 A	Die	-40 °C	150 °C	100 V		Die	5.5 nC	664 pF	2.5 V	-4 V	6 V	5 V			10.5 mOhm
EPC EPC2016	N-Channel	GaNFET (Gallium Nitride)	Surface Mount	11 A	Die	-40 C	125 °C	100 V	16 mOhm	Die	5.2 nC		2.5 V	-5 V	6 V	5 V		520 pF
EPC EPC2021ENGR	N-Channel	GaNFET (Gallium Nitride)	Surface Mount	60 A	Die	-40 °C	150 °C	80 V	2.5 mOhm	Die	15 nC	1700 pF	2.5 V	-4 V	6 V	5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

Description

General part information

EPC20 Series

N-Channel 100 V 11A (Ta) Surface Mount Die

Documents

Technical documentation and resources