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EPC2016_RY
Discrete Semiconductor Products

EPC2016

Obsolete
EPC

GANFET N-CH 100V 11A DIE

EPC2016_RY
Discrete Semiconductor Products

EPC2016

Obsolete
EPC

GANFET N-CH 100V 11A DIE

Technical Specifications

Parameters and characteristics for this part

SpecificationEPC2016
Current - Continuous Drain (Id) (Ta)11 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)5 V
FET TypeN-Channel
Gate Charge (Max)5.2 nC
Input Capacitance (Ciss) (Max)520 pF
Mounting TypeSurface Mount
Operating Temperature (Max)125 °C
Operating Temperature (Min)-40 °C
Package / CaseDie
Package NameDie
Rds On (Max)16 mOhm, 16 mOhm
TechnologyGaNFET (Gallium Nitride)
Vgs (Max) Negative-5 V
Vgs (Max) Positive6 V
Vgs(th) (Max)2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated

CAD

3D models and CAD resources for this part

Description

General part information

EPC20 Series

N-Channel 100 V 11A (Ta) Surface Mount Die

Documents

Technical documentation and resources